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Data sensing device and data sensing method

A data sensing and data technology, applied in digital memory information, static memory, read-only memory, etc., can solve problems such as data reading errors, and achieve the effect of solving data reading errors

Inactive Publication Date: 2010-06-02
ETRON TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] One of the objectives of the present invention is to provide a data sensing device that can solve the problem of data reading errors caused by signal accumulation

Method used

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  • Data sensing device and data sensing method
  • Data sensing device and data sensing method
  • Data sensing device and data sensing method

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Experimental program
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Embodiment Construction

[0021] Please also see Figure 2A , Figure 2B . Figure 2A A schematic diagram showing part of the circuit of the data sensing device according to an embodiment of the present invention; Figure 2B show Figure 2A Signal waveform diagram of the data sensing device.

[0022] Such as Figure 2A As shown, the data sensing device 200 includes a memory array circuit 200a, a control circuit 200b, and at least one pre-charging circuit 200c.

[0023] The memory array circuit 200a includes a plurality of data lines (Data lines) 201, a plurality of bit lines (Bit lines) 202, a plurality of sense amplifiers (Sense Amplifier) ​​203, a plurality of memory cells (memorycell) 204, a plurality of The coupling relation of the data line switch 205 is shown in the figure. The data line 201 reads the data of the storage unit 204 through the data line switch 205, or writes data to the storage unit 204; the sense amplifier 203 is coupled to the bit line 202, and is used to amplify the output...

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Abstract

The invention provides a data sensing device and a data sensing method. The data sensing device comprises a plurality of storage units, a plurality of data lines, a plurality of sensing amplifiers and at least one precharge circuit, wherein the storage units are used for storing data; the data lines are respectively coupled to the storage units and are used for controlling the reading or the writing of the storage units; bit lines are respectively coupled to the storage units and are used for outputting the data stored in the storage units; the sensing amplifiers are respectively coupled to the bit lines and are used for amplifying the data output by the storage units; and the precharge circuit is used for setting a preset period according to a first synchronous signal, a precharge signal is generated in the preset period, and the storage units and the sensing amplifiers are charged through the data lines.

Description

technical field [0001] The present invention relates to a data sensing device, in particular to a pre-chargeable data sensing device. Background technique [0002] With the advancement of semiconductor manufacturing process, the area and operating voltage of transistors are getting smaller and smaller, which makes the current electronic circuits more and more high-speed and the chip area is also getting smaller and smaller. [0003] However, in a memory circuit, such as a DRAM (Dynamic Random Access Memory, DRAM), many data lines (Data Line) and bit lines (Bit line) are included. [0004] When the capacity of the memory gradually increases, the data lines and the bit lines will become longer, and there will be a signal accumulation phenomenon in the data lines and the bit lines. Such as Figure 1A As shown, if the logic value of the data line signal is not always fixed, such as the logic 0, 1, 0, 1 shown in the figure, the phenomenon of signal accumulation is not obvious or...

Claims

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Application Information

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IPC IPC(8): G11C7/06G11C16/26G11C7/12
Inventor 王释兴袁德铭戎博斗夏浚
Owner ETRON TECH INC