Unlock instant, AI-driven research and patent intelligence for your innovation.

Method of manufacturing semiconductor device

A technology for semiconductors and devices, applied in the field of manufacturing semiconductor devices, can solve the problems of circuit influence, inability to obtain operation, etc., and achieve the effect of precise etching

Inactive Publication Date: 2010-06-16
NEC ELECTRONICS CORP
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This changes the circuit constants initially set, making it impossible to obtain the desired operation
[0010] In other words, the conventional method can achieve uniform etching, but has the problem that it can only be applied to a specific circuit since a conductive path formed to achieve uniform etching may have an influence on the circuit
As mentioned above, for example, the application of conventional methods is limited to the production of circuits in which some elements are connected to the same potential

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method of manufacturing semiconductor device
  • Method of manufacturing semiconductor device
  • Method of manufacturing semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] Preferred exemplary embodiments of the present invention will be described below. The following description of the exemplary embodiments of the present invention is only exemplary, and the present invention is not limited to the exemplary embodiments described below. For clarity of explanation, omissions and simplifications are made as necessary in the following description and drawings. In addition, redundant descriptions thereof are appropriately omitted for clarity of illustration. Note that the same components are denoted by the same reference numerals in the drawings, and descriptions thereof are appropriately omitted.

[0029] will refer to Figure 1 to Figure 3 A method of manufacturing a semiconductor device according to an exemplary embodiment of the present invention is described. figure 1 and figure 2 are schematic diagrams each showing a method of manufacturing a semiconductor device according to the present exemplary embodiment. image 3 is a circuit...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Provided is a method of manufacturing a semiconductor device including an integrated circuit having a plurality of semiconductor elements which are formed on a semiconductor substrate and electrically connected through a line, the method including: forming a conducting path to be connected to the semiconductor elements in a similar manner as the line is to be connected thereto; etching the semiconductor elements in a state where the semiconductor elements are electrically connected via the conducting path; and forming the line to be connected to the semiconductor elements in a similar manner as the conducting path is connected thereto.

Description

technical field [0001] The present invention relates to methods of manufacturing semiconductor devices. In particular, the present invention relates to a method of manufacturing a semiconductor device including an etching process for an integrated circuit in which a plurality of semiconductor elements formed on a semiconductor substrate are electrically connected by wires. Background technique [0002] In manufacturing semiconductor devices including heterojunction bipolar transistors (HBTs), hot electron transistors (HETs), field effect transistors (FETs), etc., usually in a state where semiconductor devices such as transistors and resistors are not electrically connected to each other An etching process is performed. This method is used to prevent unnecessary electrical connections in the circuit and to enable individual observation of the characteristics of the components. Therefore, the etching process is performed after the devices are isolated (isolated) from each ot...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/82H01L21/768
CPCH01L27/0207H01L27/0629
Inventor 齐藤茂
Owner NEC ELECTRONICS CORP