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Scanning exposure method

A scanning exposure and exposed technology, applied in the field of scanning exposure, can solve the problems of increasing production cost, determining process parameters, consumption, etc., and achieve the effect of reducing defect rate, reducing offset, and improving the degree of overlay offset

Inactive Publication Date: 2010-06-23
NAN YA TECH
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Problems solved by technology

[0004] However, because the front-layer structure of the tester-controlled film is actually different from that of the wafer product that has formed a multi-layer front layer, even if the exposure procedure is performed with the same process parameters, the front-layer structure of the tester-controlled film and the wafer product is the same as the current one. There will still be a slight difference in the stacking offset relationship between layers, so it is impossible to effectively determine the process parameters only with the measurement data of the machine-controlled wafer
In addition, the better process parameters must be measured by the test machine control chip before shipment, so after each test machine control film, it must be reworked with pickling solution to remove the photoresist. It not only consumes the use of pickling solution to increase the production cost, but also is unfavorable to the utilization rate of the exposure equipment, causing great damage to the production capacity and cost control

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Embodiment Construction

[0018] The scanning exposure method of the present invention utilizes the historical data of the exposure device when exposing the substrate before and the measurement data of the substrate after exposure to determine the optimal exposure parameters of the exposure device. The obtained exposure parameters can make up for the process drift or process variation of the exposure machine, so that when the exposure machine exposes the substrate later, an exposed irradiation area in the substrate has a desired size, and the photoresist of the current layer can be improved. Alignment of the agent with the front layer. The aforementioned substrate may be a wafer, a display substrate, an optical element substrate, a printed circuit board or other materials completed by exposure process.

[0019] The following uses the fabrication of a semiconductor wafer as an example for illustration. Please refer to figure 1 , the scanning exposure device includes a mask stage supporting a mask R wi...

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Abstract

The present invention provides a scanning exposure method comprising the following step: a mask and a base plate are correspondingly moved toward the same direction, wherein the mask and the base plate have at least two different equal relative velocities in a single shooting moving process to enable a shooting area of the base plate which is exposed once to have a desired size. The scanning exposure method can reduce the offset of the superimposed measuring data of the existing wafer towards the same direction, and can also effectively improve the extent of superimposed offset between the existing layer and a front layer; and the fraction defective of a wafer is reduced.

Description

technical field [0001] The invention relates to photolithography technology, and in particular to a scanning exposure method. Background technique [0002] In recent years, with the increase of integration of integrated circuits, semiconductor process design is also developing towards the direction of reducing the size of semiconductor elements to increase the density. For the photolithography process, due to the shrinking of the device size, the critical dimension (CD) of each layer is also miniaturized. Therefore, the overlay quality between layers is more obvious. important. [0003] For the semiconductor wafer manufacturing industry, it is generally necessary to confirm that the exposure device has the appropriate process parameters. Before placing the goods, first pass the test or monitor wafer after the exposure device is exposed, and then stack the measurement equipment. (overlay metrology) to measure the data of the overlay shift value (overlay shift) between the p...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20
Inventor 施江林黄浚彦
Owner NAN YA TECH