Method for detecting etching fluid filter

A filter and etching solution technology, which is applied in the field of semiconductor technology, can solve the problems of undetectable filter aging, etc., and achieve the effects of reducing the generation of defective products, ensuring the pass rate, and improving the accuracy of measurement

Inactive Publication Date: 2010-07-07
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
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Problems solved by technology

[0005] In order to overcome the problem that the normal monitoring method in the prior art cannot detect whether t

Method used

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  • Method for detecting etching fluid filter
  • Method for detecting etching fluid filter
  • Method for detecting etching fluid filter

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[0017] The method for monitoring the filter used in the etching solution of the present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0018] Since the existing detection method cannot detect whether the filter is aging, the present invention proposes a new detection method for detecting the problem of filter aging, please refer to image 3 , image 3 This is a schematic flow chart of the method for monitoring a filter used in an etching solution of the present invention, including step 111: selecting multiple points on a wafer covered with a uniform oxide film. The oxide should not be too thick, generally below 100 nanometers This is for the consideration of the over-etching monitoring process later. If the thickness is too thick, the over-etching monitoring process will take a long time and affect normal production. In addition, the selected points on the wafer are more than 40. At least 40, and evenly ...

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Abstract

The invention provides a method for detecting a etching fluid filter, which comprises the following steps: selecting a plurality of points on a wafer covered with a layer of uniform oxide film; measuring the initial thickness of the wafer at the plurality of points; carrying out the over etching process for the wafer; measuring the residual thickness of the wafer at the plurality of points; calculating the difference value between the initial thickness and the residual thickness at the plurality of points and the standard variance of the difference value, comparing the standard variance with a standard value, if the standard variance is more than the standard value, showing that the detection result is not qualified and the filter needs to be replaced, and if the standard variance is less than the standard value, showing that the detection result is qualified. The invention can detect whether the filter is aged or not, provides a determining basis for timely replacing the filter under the state that the filter is aged, and reduces the generation of defective products due to the aging of the filter so as to ensure the passing rate of products.

Description

technical field [0001] The invention relates to a semiconductor process, in particular to a method for detecting an etching solution filter. Background technique [0002] In many semiconductor processes, etching is one of the core process technologies that determine the feature size. Etching is divided into wet etching and dry etching. Wet etching is widely used in semiconductor processes. From the cutting of silicon ingots into semiconductor wafers, chemical etchers are used to grind and polish to obtain optical-grade flat and damage-free surfaces. Before thermal oxidation and epitaxial growth, semiconductor silicon wafers should be chemically cleaned to remove contamination from operation and storage. Wet etching is especially suitable for surface etching of polysilicon, oxides, nitrides and metals. In the current semiconductor process, a very important application of wet etching is the etching in the wafer double gate oxide process. , including high-voltage gate pre-etc...

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Application Information

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IPC IPC(8): G01N15/08G01N33/00
Inventor 魏广升赵建方王瑞明黄海英
Owner SEMICON MFG INT (SHANGHAI) CORP
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