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Detection method for detecting interference phenomenon of adjacent blocks of non-volatile storage

A detection method and non-volatile technology, applied in static memory, instruments, etc., can solve problems such as undetectable interference-type manufacturing defects in flash memory

Inactive Publication Date: 2013-01-02
NOVATEK MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It can be seen that the test method shown in the known technology cannot detect the manufacturing defect of interference type in the flash memory

Method used

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  • Detection method for detecting interference phenomenon of adjacent blocks of non-volatile storage
  • Detection method for detecting interference phenomenon of adjacent blocks of non-volatile storage
  • Detection method for detecting interference phenomenon of adjacent blocks of non-volatile storage

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Embodiment Construction

[0015] The non-volatile memory mentioned in the present invention can preferably be a NAND flash memory, or other common non-volatile memory in the industry. In addition, for the sake of brevity, the distribution and marking of the blocks of the non-volatile memory in the present invention are the same as figure 1 Flash memory 10 is shown.

[0016] Please refer to figure 2 , figure 2 It is a schematic diagram of a detection process 20 according to an embodiment of the present invention. The detection process 20 is used to detect the interference phenomenon of adjacent blocks of a non-volatile memory, which includes the following steps:

[0017] Step 200: start.

[0018] Step 210 : at a first time point, one by one erase and write a test data to each block of the plurality of blocks to be tested in the non-volatile memory.

[0019] Step 220: According to a sequence number included in each block of the plurality of blocks to be tested, assign the plurality of blocks to be...

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Abstract

A detection method for detecting interference phenomenon of adjacent blocks of a non-volatile storage, comprises: on a first time point, erasing and writing a test data one by one to each block of a plurality of blocks to be tested in the non-volatile storage; according to one serial number contained in each block of the blocks to be tested, assigning the blocks to be tested to a first block group and a second block group; at a second time point, reading the data stored in each block of the first block group, and checking whether the data is consistent with the test data written on the first time point or not so as to generate a first check result; and according to the first check result, judging the effectiveness of each block of the first block group.

Description

technical field [0001] The invention relates to a detection method for a non-volatile memory, in particular to a detection method for effectively detecting interference between adjacent blocks of the flash memory. Background technique [0002] Flash memory (Flash Memory) is a kind of non-volatile memory, which can perform almost countless read and write functions. At the same time, due to the increasing read and write speed and capacity of flash memory, the application of flash memory is becoming more and more extensive, ranging from memory cards and flash drives to mobile phones, game consoles, digital cameras, etc., and the recently popular Almost all kinds of electronic products in the world use flash memory for data storage. [0003] The flash memory uses the design of the floating gate (Floating Gate). According to the principle of quantum mechanics, the charges are written into the floating gate in the form of tunnel injection (Tunnel Injection), and the reverse tunne...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C29/04
Inventor 王政斌
Owner NOVATEK MICROELECTRONICS CORP