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Method for detecting the diameter of a single crystal and single crystal pulling apparatus

A detection method, a single crystal technology, applied in the direction of single crystal growth, single crystal growth, chemical instruments and methods, etc., can solve the problems of increased measurement error, larger, calculated diameter, etc., to achieve the effect of improving the large diameter

Active Publication Date: 2012-07-25
SHIN-ETSU HANDOTAI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the increase in the weight of the crystal, the maximum allowable weight of the dynamometer must be increased. In this case, the measurement error increases, or the diameter cannot be calculated in a short time due to the decrease in sensitivity. If the diameter becomes larger in a short time , it is necessary to increase the growth rate of crystals to return the diameter to the target value, but there is a problem that it is impossible to perform short-term control and produce concave-convex crystals
Also, when the single crystal to be grown is a concave-convex crystal, the unevenness of the quality of the concave-convex part becomes large, or the problem that a defective product is produced due to insufficient diameter of the concave part occurs.

Method used

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  • Method for detecting the diameter of a single crystal and single crystal pulling apparatus
  • Method for detecting the diameter of a single crystal and single crystal pulling apparatus
  • Method for detecting the diameter of a single crystal and single crystal pulling apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0060] use Figure 4 The single crystal pulling device, according to Figure 5 In the flow shown, the detection diameter of the camera is corrected, and the obtained value is corrected to control the diameter to manufacture a single crystal. Before producing a single crystal, the relationship between the growth rate and the correction coefficient ( Figure 7 ). Let the crystal body length L1 at the beginning of the calculation be 5 cm, and the crystal body length L2 be 15 cm, and detect the detected diameter Do of the camera between 5 cm and 15 cm, and the diameter Dw calculated according to the weight change therebetween. After 15 cm, it is the difference (Do-Dw) between the diameter detected by the camera and the diameter calculated by the force measurement, plus a correction factor of -1.5 relative to the actual pulling speed of 0.4 mm / min. The detection diameter of the camera is corrected by adding this value to the detection diameter of the camera, and the diameter of ...

Embodiment 2

[0062] Using the same single crystal pulling device as in Example 1, except that the crystal body length L1 at the beginning of the calculation is 5 cm, the crystal body length L2 is 25 cm, and the average interval to be calculated and corrected is 20 cm, using the same method as In the same way as in Example 1, the value obtained by adding the correction coefficient -1.5 relative to the actual pulling speed of 0.4 mm / min is added to the detection diameter of the camera to correct the detection diameter of the camera, and the single crystal The diameter of is controlled so that by correcting the obtained value, a single crystal is produced. The diameter after crystal production was measured in the same manner as in Example 1 at a portion of 40 cm from the crystal body, and the variation in diameter (standard deviation σ) was evaluated.

Embodiment 3

[0071] Use the same single crystal pulling device as in Example 1, and make the average interval (L2-L1) to be calculated and corrected be 5 cm, 10 cm, 15 cm, and 20 cm, and each pass the same method as in Example 1, A single crystal was manufactured by controlling the diameter of the single crystal, and an error in calculating the diameter of the dynamometer when the crystal body was 40 cm was investigated. As a result, the error of repeated weight measurement of the actual dynamometer is 100 grams even if the average interval (L2-L1) is any one of 5 cm to 20 cm. At this time, the diameter in the region of 10 cm or more The conversion error is about 1 mm or less.

[0072] Figure 10 It is a graph showing the relationship between the average interval (L2-L1) to be calculated and corrected and the diameter calculation error of the dynamometer in Example 3. according to Figure 10 , so that the average interval (L2-L1) is 10 cm and 20 cm, no significant difference is observed...

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Abstract

A method for detecting the diameter of a single crystal grown by the Czochralski method is characterized in that the diameter of a single crystal is determined by means of both a camera and a load cell, the diameter measured by means of the camera is corrected by using the difference between the diameter measured by means of the camera and the diameter computed by using the load cell and a correction coefficient a predetermined according to the growth rate of the single crystal, and the corrected value is used as the diameter of the single crystal. A single crystal pull-up apparatus comprisesboth a camera and a load cell for determining the diameter of a pulled-up single crystal. With this, the accuracy of measurement of the diameter of a large-diameter heavy-weight crystal is improved, and yield enhancement and reduction of quality variation are achieved.

Description

technical field [0001] The invention relates to a method for detecting the diameter of a single crystal grown by the Czochralski method and a single crystal pulling device. Background technique [0002] The Czochralski method (hereinafter referred to as the CZ method) is known as a method for growing semiconductor single crystal silicon. This method grows single crystals by first soaking the seed crystals in the melt, and then slowly pulling upwards while rotating. Single crystal is manufactured with a certain caliber as the target. For example, when the final product is an 8-inch (200 mm) wafer, crystals are typically fabricated with a size of 200 to 210 mm slightly larger than this diameter. Subsequently, the crystal is formed into a cylindrical shape by grinding the outer periphery, cut into a wafer shape, and then undergoes a chamfering step to become the final target wafer diameter. The target diameter in single crystal manufacturing must be larger than the wafer dia...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B15/22
CPCC30B15/28C30B15/26Y10T117/1004
Inventor 柳町隆弘园川将
Owner SHIN-ETSU HANDOTAI CO LTD