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Complementary scr structure with auxiliary triggering of nmos field effect transistor

A field-effect transistor and complementary technology, applied in the direction of electric solid-state devices, semiconductor devices, semiconductor/solid-state device components, etc., can solve the problems of difficulty in applying integrated circuit ESD protection, high trigger voltage avalanche breakdown voltage, etc., and achieve low trigger Effect of small voltage and silicon chip area

Inactive Publication Date: 2012-02-01
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0011] The disadvantage of the above complementary SCR structure is mainly that its trigger voltage (avalanche breakdown voltage between the N-type substrate and the P well) is so high that it is difficult to apply to the on-chip ESD protection of integrated circuits under deep submicron technology.

Method used

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  • Complementary scr structure with auxiliary triggering of nmos field effect transistor
  • Complementary scr structure with auxiliary triggering of nmos field effect transistor
  • Complementary scr structure with auxiliary triggering of nmos field effect transistor

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Embodiment Construction

[0053] The complementary SCR structure of a kind of NMOS field effect transistor auxiliary trigger of the present invention, its equivalent circuit diagram is as follows image 3 As shown, it includes:

[0054] The first thyristor SCR1 is composed of a first bipolar transistor 30 and a second bipolar transistor 31, wherein the emitter of the first bipolar transistor 30 is connected to the positive power supply line VDD, and the emitter of the first bipolar transistor 30 The base is connected to the positive power supply line VDD through the N-well resistor 36; the emitter of the second bipolar transistor 31 is connected to the chip pin IN to be protected, and the base of the second bipolar transistor 31 is connected to the VDD through the P-well resistor 37. Negative power supply line VSS;

[0055] The second thyristor SCR2 is composed of a third bipolar transistor 32 and a fourth bipolar transistor 33, wherein the emitter of the third bipolar transistor 32 is connected to th...

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Abstract

The invention discloses a complementary silicon controlled rectifier (SCR) structure triggered with the aid of an N-channel metal oxide semiconductor (NMOS) field effect transistor. In the structure, a first SCR consists of two bipolar transistors for electro-static discharge (ESD) protection between a positive power line and a protected chip pin; a second SCR consists of another two bipolar transistors for the ESD protection between the protected chip pin and a negative power line; and a third SCR consists of one of the two bipolar transistors in the first SCR and one of the two bipolar transistors in the second SCR for the ESD protection between the positive power line and the negative power line. The triggering voltage of each SCR can be reduced by the NMOS field effect transistor; in particular, the invention is applicable to the on-chip ESD protection of the integrated circuit of deep submicron technology.

Description

technical field [0001] The invention belongs to the field of integrated circuits, in particular to a complementary SCR structure used to improve the reliability of integrated circuit ESD protection. Background technique [0002] The phenomenon of electrostatic discharge (ESD) in nature is the most important reliability problem that causes the failure of integrated circuit products. Relevant research surveys show that 30% of integrated circuit failure products are caused by electrostatic discharge phenomena. Therefore, improving the reliability of integrated circuit electrostatic discharge protection has a non-negligible effect on improving the yield of products and even driving the entire national economy. [0003] Electrostatic discharge phenomenon is usually divided into three discharge modes according to the source of charge: HBM (Human Body Discharge Model), MM (Machine Discharge Mode), and CDM (Component Charge Discharge Mode). The two most common electrostatic discha...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/07H01L29/06H01L23/60
CPCH01L2924/0002
Inventor 李明亮董树荣韩雁宋波苗萌马飞
Owner ZHEJIANG UNIV