Full-spectral-domain laminated silicon-base film solar cell
A silicon-based thin film and solar cell technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of inability to absorb photons, light loss, and limit the photoelectric conversion efficiency of cells, and achieve expanded spectral response, novel structure, and improved photoelectricity. The effect of conversion efficiency
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Embodiment 1
[0019] figure 1 It is a schematic diagram of the structure of a full-spectrum laminated silicon-based thin-film solar cell with a transparent glass substrate. The figure includes a glass substrate 1, a front electrode 2 and a back electrode 12. It adopts a triple-junction laminated cell structure, of which the first The p-i-n cells 3, 4, and 5 are wide-bandgap silicon-based thin-film solar cells, in which the wide-bandgap intrinsic absorption layer i14 is made of wide-bandgap amorphous silicon material with a bandgap of 1.8eV, and the thickness is 150nm; the second p-i-n cells 6, 7 , 8 are intermediate bandgap silicon-based thin-film solar cells, wherein the intermediate bandgap intrinsic absorption layer i27 is made of amorphous silicon germanium material with a bandgap of 1.5eV, and the thickness is 400nm; the third p-i-n cells 9, 10, and 11 are narrow-band Gap silicon-based thin-film solar cells, in which the narrow bandgap intrinsic absorption layer i310 is made of microcr...
Embodiment 2
[0022] Also use the full-spectrum domain stacked silicon-based thin-film solar cells with transparent glass substrates, such as figure 1 As shown, the difference from Example 1 is that in the first p-i-n battery 3, 4, 5, the wide bandgap intrinsic absorption layer i14 is made of a wide bandgap amorphous silicon material with a bandgap of 1.7eV, and the thickness is 200nm; In the two p-i-n cells 6, 7, and 8, the middle bandgap intrinsic absorption layer i27 is made of amorphous silicon germanium material with a bandgap of 1.1eV, and the thickness is 1500nm; in the third p-i-n cell 9, 10, 11, the narrow bandgap The intrinsic absorption layer i310 is made of microcrystalline silicon germanium material with a band gap of 0.8eV, and its thickness is 2500nm.
[0023] The narrow-bandgap microcrystalline silicon germanium material involved in this embodiment is prepared by VHF-PECVD technology, that is, the deposition temperature of the mixed gas of silane, germane and hydrogen is (18...
Embodiment 3
[0025] figure 2 It is a schematic diagram of the structure of a full-spectrum stacked silicon-based thin-film solar cell with a stainless steel substrate. The figure includes a stainless steel substrate 1, a front electrode 2, and a back electrode 12. It adopts a triple-junction stacked cell structure, and the deposition sequence and Contrary to Embodiment 1, that is: the first p-i-n cells 9, 10, and 11 deposited first are narrow-bandgap silicon-based thin-film solar cells, wherein the narrow-bandgap intrinsic absorption layer i310 adopts a microcrystalline silicon germanium material with a bandgap of 0.8eV, The thickness is 2500nm; the second p-i-n cell 6, 7, 8 is an intermediate bandgap silicon-based thin-film solar cell, in which the intermediate bandgap intrinsic absorption layer i27 is made of microcrystalline silicon material with a bandgap of 1.1eV, and the thickness is 1500nm; The three p-i-n cells 3, 4, and 5 are wide-bandgap silicon-based thin-film solar cells, in w...
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