Preparation method of light-emitting diode insulation crystal-bonding adhesive

A technology of crystal bonding glue and preparation steps, which is applied in the direction of adhesives, etc., can solve the problems of insulating crystal bonding glue yellowing, blackening, and increased light attenuation of white LEDs, and achieve excellent thermal conductivity, improved blackening performance, and improved thermal conductivity. Effect

Active Publication Date: 2010-07-28
JIANGSU WENRUN OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, low-power white light LEDs all use epoxy resin insulating glue as the die-bonding glue. Due to the low thermal conductivity of the insulating die-bonding glue, generally only about 0.2w/m.k, the heat generated by the LED cannot be fast when it is working. Effectively lead out and dissipate heat, and because the insulating glue is made of ep

Method used

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  • Preparation method of light-emitting diode insulation crystal-bonding adhesive
  • Preparation method of light-emitting diode insulation crystal-bonding adhesive
  • Preparation method of light-emitting diode insulation crystal-bonding adhesive

Examples

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Example Embodiment

[0021] Example 1

[0022] A method for preparing LED insulating solid crystal glue, its raw material composition is: 15% by mass of nano alumina, 10% by mass of nano AlN, and the rest is a mixture of two components A and B. The preparation steps of siloxane resin are as follows: (1) A two-component polysiloxane resin is used, and component A is composed of 99.9% by weight of methyl phenyl vinyl polysiloxane resin and 0.1% by weight. The platinum catalyst is composed of 80wt% silica gel, 15wt% dimethylhydrosiloxyphenyl silane and 5wt% diphenylbis(dimethylvinylsiloxy) silane. The A component and the B component are mixed in a mass ratio of 1:1 and stirred evenly; (2) Add 15wt% of nano alumina, then stir and mix evenly to make the viscosity ≥35000cps; (3) Then Add 10wt% of nano AlN and stir the mixed system evenly.

Example Embodiment

[0023] Example 2

[0024] A preparation method of LED insulating solid crystal glue, the raw material composition is: 5% by mass of nano-titania, 5% by mass of nano-magnesium oxide, 15% by mass of nano-AlN, The rest is a two-component mixed polysiloxane resin of A and B. The preparation steps are as follows: (1) A two-component polysiloxane resin is used, and the A component is composed of 99.92wt% methyl phenyl Vinyl polysiloxane resin and 0.08wt% platinum catalyst, B component consists of 83wt% silica gel, 10wt% dimethylhydrosiloxyphenyl silane and 7wt% diphenylbis(dimethyl Vinylsiloxy) silane composition, the A component and the B component are mixed at a mass ratio of 1:1, and stirred evenly; (2) 5wt% of nano titanium dioxide and 5wt% of nano magnesium oxide are added and then proceed Stir and mix uniformly to make the viscosity ≥35000cps; (3) Then add 15wt% of nano-AlN and stir the mixed system uniformly.

Example Embodiment

[0025] Example 3

[0026] A method for preparing LED insulating solid crystal glue. Its raw material composition is: nano alumina with a mass percentage of 10%, nano silica with a mass percentage of 5%, and nano-silica with a mass percentage of 10%. AlN, the rest is a two-component mixed polysiloxane resin of A and B. The preparation steps are as follows: (1) A two-component polysiloxane resin is used, and component A is composed of 99.98wt% methyl Phenyl vinyl polysiloxane resin and 0.02wt% platinum catalyst, B component consists of 80wt% silica gel, 15wt% dimethylhydrosiloxyphenyl silane and 5wt% diphenyl bis (two It is composed of methyl vinyl siloxy) silane, the A component and the B component are mixed in a mass ratio of 1:1 and stirred uniformly; (2) 10wt% of nano alumina and 5wt% of nano two The silicon oxide is then stirred and mixed uniformly to make its viscosity ≥35000cps; (3) Then 10wt% of nano-AlN is added, and the mixed system is stirred uniformly.

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Abstract

The invention discloses a preparation method of light-emitting diode (LED) insulation crystal-bonding adhesive. The raw materials comprise 10-20wt% of inorganic nanometer material, 10-20wt% of nano-AlN and the balance polysiloxane resin mixed by component A and component B. The preparation method comprises the following steps: (1) adopting polysiloxane resin containing component A and component B, mixing component A and component B in a weight ratio of 1:1, stirring evenly; (2) adding inorganic nanometer material, then stirring to mix evenly and ensure that the viscosity is not less than 35000cps; and (3) then adding nano-AlN, and stirring the mixed system evenly to obtain the finished product. The insulation crystal-bonding adhesive prepared by the method of the invention has excellent heat conductivity; and as polysiloxane resin is used as base material, the yellowing resistance and blackening resistance are greatly increased and the LED insulation crystal-bonding adhesive of the invention is far superior to the insulation crystal-bonding adhesive using epoxy resin as base material.

Description

technical field [0001] The invention relates to a preparation method of LED insulating crystal-bonding glue. Background technique [0002] With the development of thin, light and small electronic components and electronic equipment, heat conduction and heat dissipation insulation materials have become a crucial issue. For general electronic components, when the temperature exceeds the allowable operating temperature by 8°C, the life span will be reduced by 50%. It can be seen that the quality of thermal design will have a very important impact on the life and reliability of electronic components and electronic equipment. In thermal design, if some good heat-conducting and insulating materials and processes can be provided, considerable economic benefits will be produced. At present, low-power white light LEDs all use epoxy resin insulating glue as the die-bonding glue. Due to the low thermal conductivity of the insulating die-bonding glue, generally only about 0.2w / m.k, th...

Claims

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Application Information

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IPC IPC(8): C09J183/07C09J9/00
Inventor 胡建红
Owner JIANGSU WENRUN OPTOELECTRONICS
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