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Unit pixel improving image sensitivity and dynamic range

A unit pixel and image signal technology, applied in the direction of electrical components, diodes, electric solid-state devices, etc., can solve the problems of low dynamic range and reduced illumination of image sensors, and achieve the effect of improving low illumination conditions and increasing dynamic range

Active Publication Date: 2013-03-20
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] 3. Overlap capacitance
[0025] As described above, since the junction capacitance changes in proportion to the voltage value dropped in the floating diffusion region FD, there is a problem in that the dynamic range and low-illuminance conditions of the image sensor (including pixels having those electrical characteristics) may be degraded.

Method used

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  • Unit pixel improving image sensitivity and dynamic range
  • Unit pixel improving image sensitivity and dynamic range
  • Unit pixel improving image sensitivity and dynamic range

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Embodiment approach

[0043] figure 2 A layout diagram of a typical unit pixel is shown.

[0044] see figure 2 , denoting the gate terminal as a hatched rectangle, which may be made of polysilicon.

[0045] The metal lines are shown as rectangles filled with dots, and the metal lines, gate terminals and diffusion regions are electrically connected through contacts represented by squares marked with "X".

[0046] see figure 2 , the unit pixel includes a photodiode PD and an image signal conversion circuit. The image signal conversion circuit includes: a transfer transistor, a reset transistor, a conversion transistor and a selection transistor.

[0047] The transfer transistor includes a photodiode region PD serving as a drain terminal and a source terminal, a floating diffusion region FD, and a gate terminal to which a transfer control signal Tx is applied. The reset transistor includes: a floating diffusion FD used as a drain terminal and a source terminal, an applied active voltage V dd ...

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Abstract

Provided are a unit pixel for improving sensitivity in low illumination conditions and a method of manufacturing the unit pixel. The unit pixel includes: a photodiode generating image charges corresponding to an image signal; a transfer transistor transferring the image charges to a floating diffusion area; and a reset transistor having a terminal connected to the floating diffusion area and the other terminal applied with a power supply, wherein concentration of impurity ions implanted into the floating diffusion area is lower than concentration of impurity ions implanted into a diffusion area of the reset transistor applied with the power supply.

Description

technical field [0001] The present invention relates to unit pixels, and more particularly, to unit pixels for improved sensitivity and increased dynamic range under low-illumination conditions. Background technique [0002] figure 1 is a circuit diagram of a unit pixel included in an image sensor. [0003] see figure 1 , the unit pixel includes a photodiode PD and an image signal conversion circuit. The image signal conversion circuit includes a transfer transistor M1, a reset transistor M2, a conversion transistor M3, and a selection transistor M4. [0004] The photodiode PD generates image charges corresponding to image signals. Image charges are transferred to the floating diffusion region FD through the transfer transistor M1 turned on or off in response to the transfer control signal Tx. The reset transistor M2 resets the floating diffusion FD. The switching transistor M3 generates a switching voltage corresponding to charges accumulated in the floating diffusion...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
CPCH01L27/14601H01L27/14643H01L27/14689H01L27/146
Inventor 李道永
Owner SK HYNIX INC