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Method for low-temperature and high-speed deposition of hydrogenated amorphous silicon nitride films

A silicon nitride film and amorphous technology, applied in the field of hydrogenated amorphous silicon nitride film, can solve the problems of slow film growth, high commercialization cost, and film doping, and achieve fast deposition speed, avoiding bombardment, lining The effect of low bottom temperature

Inactive Publication Date: 2012-01-04
HEBEI UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In its traditional preparation process, there are at least the following two defects: ①The substrate temperature is very high, which easily leads to the doping of the film; ②The growth of the film layer is slow, and the commercialization cost is high
For this reason, a variety of new methods for the preparation of hydrogenated amorphous silicon nitride films have been proposed, but the above-mentioned technical problems have not been well solved, and the low-temperature rapid growth of hydrogenated amorphous silicon films has been realized.

Method used

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  • Method for low-temperature and high-speed deposition of hydrogenated amorphous silicon nitride films
  • Method for low-temperature and high-speed deposition of hydrogenated amorphous silicon nitride films
  • Method for low-temperature and high-speed deposition of hydrogenated amorphous silicon nitride films

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Embodiment 1

[0026] The method for depositing hydrogenated amorphous silicon nitride film at low temperature and high speed in the first embodiment of the present invention comprises the following steps:

[0027] A. Take a single crystal silicon wafer substrate, soak it in a mixture of acetone and methanol for 3 minutes, take it out and dry it, and then use the volume ratio NH 4 OH:H 2 o 2 :H 2 Soak in the mixed solution of O=1:2:5 for 5 minutes, take it out and rinse it with deionized water, and then put it in the volume ratio HF:H 2 Soak in the mixed solution of O=1:10 for 1 minute, take it out, rinse it with deionized water, dry it, and then place the substrate on the substrate stage of the magnetron reactive sputtering deposition device for the target;

[0028] B. Use the vacuum pumping system to evacuate the reaction chamber of the target magnetron reactive sputtering deposition device, so that the reaction chamber pressure is lower than 5×10 -4 Pa;

[0029] C. First cover the su...

Embodiment 2

[0033] The method for depositing hydrogenated amorphous silicon nitride film at low temperature and high speed in the second embodiment of the present invention has the same steps as in embodiment 1, except that the substrate stage is heated to 100° C. in step 1-D.

Embodiment 3

[0035] The method for depositing hydrogenated amorphous silicon nitride thin film at low temperature and high speed in the third embodiment of the present invention has the same steps as in embodiment 1, except that the substrate stage is heated to 150° C. in step 1-D.

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Abstract

The invention discloses a method for low-temperature and high-speed deposition of hydrogenated amorphous silicon nitride films, comprising the following steps: placing a rinsed substrate on the substrate plate of the magnet-controlled target sputtering device; then vacuumizing the reaction chamber of the magnet-controlled target sputtering device and cleansing the substrate plate and the walls ofthe reaction chamber with argon plasma; reheating the substrate plate and inflating the reaction chamber with reaction gas and adjusting the air pressure; turning on the power of the sputtering device to start the deposit of the amorphous silicon nitride films until the specimen of the amorphous silicon nitride films are obtained. Finally, the specimen can be obtained with the protection of hydrogen to complete the deposition of the amorphous silicon nitride films under room temperature. The invention can make use of the sputtering deposition technology of target magnet control reaction and deposit the hydrogenated amorphous silicon nitride films at a high speed under low temperatures.

Description

technical field [0001] The invention relates to the field of film preparation, in particular to a method for low-temperature and high-speed deposition of a hydrogenated amorphous silicon nitride film used as an antireflection film for a solar cell. Background technique [0002] The preparation technology of hydrogenated amorphous silicon nitride thin film has become a topic of great concern. Due to its extraordinary photoelectric properties, it has great practical significance and broad application prospects in the field of microelectronics technology and solar technology. In its traditional preparation process, there are at least the following two defects: ①The substrate temperature is very high, which easily leads to the doping of the film; ②The growth of the film layer is slow, and the commercialization cost is high. For this reason, various new methods for preparing hydrogenated amorphous silicon nitride thin films have been proposed, but the above-mentioned technical pr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/06C23C14/02
Inventor 于威傅广生孟令海腾晓云王春生卢海江
Owner HEBEI UNIVERSITY