Chalcogenide film and method for producing the same
A chalcogenide and manufacturing method technology, applied in metal material coating process, ion implantation plating, coating and other directions, can solve problems such as increased resistance, poor conduction, chalcogenide film voids, etc., to achieve adhesion The effect of improving and preventing the increase of resistance and excellent electrical conductivity
Active Publication Date: 2010-10-06
ULVAC INC
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Problems solved by technology
[0009] However, as described above, in the method of embedding a chalcogen compound in a contact hole by sputtering, there is a problem that the produced chalcogenide film detaches from the contact hole to generate a void
In addition, in terms of the characteristics of film formation by sputtering, if the diameter of the contact hole and the depth of the hole are about twice or more, the chalcogen compound cannot completely bury the contact hole, and there is a problem that voids remain in the center.
If the chalcogen compound buried in the contact hole creates voids, it will cause problems such as increased resistance and poor conduction
Method used
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[0056] Hereinafter, in order to verify the effect of the present invention, the results of verification of the melting point depressing effect when a melting point depressing material is mixed with the chalcogen compound are shown as examples. At the time of verification, Al, Al, Si, B, C, studied the degree of melting point drop ΔT (°C). The verification results are shown in Table 1.
[0057] [Table 1]
[0058] Amount added (at%)
[0059] Amount added (at%)
[0060] From the verification results shown in Table 1, it was confirmed that Al, Si, and B have an effect of significantly lowering the melting point of the chalcogen compound when the addition amount is in the range of 5 at % to 12 at %. In particular, it was found that the melting point of the chalcogen compound was lowered by about 50° C. when the amount of Al added was around 8 at %.
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Disclosed is a chalcogenide film which is formed in a contact hole, which is formed in an insulating layer on a substrate, by sputtering and is composed of a chalcogen compound containing a melting point lowering material which lowers the melting point.
Description
technical field [0001] The present invention relates to a chalcogenide film and a manufacturing method thereof, more specifically, to a chalcogenide film suitable for a recording layer of a high-integration memory capable of non-volatile operation such as a phase change memory, and a chalcogenide film without defects such as voids or cracks inside, and its method of manufacture. [0002] This application uses Japanese Patent Application No. 2007-297702 as a basic application, and the content thereof is incorporated here. Background technique [0003] In recent years, in portable devices such as portable telephones and portable information terminals, the demand for processing a large amount of information such as image data has increased. In addition, the demand for a small non-volatile memory is also increasing. [0004] Among them, a variable resistance nonvolatile memory (variable resistance memory element) using a chalcogen compound whose resistance value changes accord...
Claims
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IPC IPC(8): H01L27/105C23C14/06H01L45/00
CPCH01L45/144C23C14/0623H01L45/1625H01L45/06H01L45/1683C23C14/046H10N70/231H10N70/026H10N70/8828H10N70/066
Inventor 菊地真西冈浩木村勋神保武人邹弘纲
Owner ULVAC INC