Polishing composition

Abstract

Disclosed is a polishing composition having a higher polishing rate, while suppressing formation of recesses or dishing. Specifically disclosed is a polishing composition suitable for a metal film, in particular a copper (Cu) film, which contains ammonia, hydrogen peroxide, an amino acid, an anionic surfactant and the balance of water. By containing such components, the polishing composition enables to suppress formation of recesses and dishing particularly when it is used in a two-step polishing.

Description

technical field [0001] The present invention relates to a polishing composition for polishing metal films, especially copper films. Background technique [0002] In order to meet the requirements of high integration and miniaturization of semiconductor integrated circuits (LSI), a technology called system-in-package (SIP) has been developed. Multiple semiconductor elements for various functions such as logic functions. As a result, the number of wirings and bumps formed on the substrate increases, and the diameter of each wiring becomes smaller, making it difficult to form fine wiring by conventional build-up methods and mechanical grinding methods. . [0003] Therefore, instead of aluminum, which has been conventionally used as a wiring material, copper, copper alloy, or the like, which has lower electrical resistance than aluminum, has been used. However, since it is difficult for copper to form wiring by dry etching such as aluminum, a wiring formation method called a ...

AI Technical Summary

Problems solved by technology

[0007] However, acidic slurry tends to decrease the grinding speed as the number of grinding pieces increases. In addition, if an alkaline cleaning solution for removing abrasive grains is used after grinding, the abrasive grains will be aggregated due to pH stimulation, so It is desired to use alkaline slurry capable of high-speed grinding instead of acidic slurry

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