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Particle beam assisted modification of thin film materials

A particle beam and particle technology, which is applied in the system field of forming substrate crystal phase, can solve the problems of inhomogeneity, lack of defects, and variation space between pulses.

Inactive Publication Date: 2010-11-24
VARIAN SEMICON EQUIP ASSOC INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the ELA process and the SLS process can produce panels with monocrystalline or polycrystalline silicon films, the above processes are not without disadvantages
For example, excimer lasers used in the above two processes are more expensive to operate, resulting in expensive TFTs
In addition, the duty cycle may not be optimal for the conversion of amorphous silicon to crystalline silicon
In addition, excimer lasers may have pulse-to-pulse variation and spatial non-uniformity in the transmitted energy, which may affect process consistency

Method used

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  • Particle beam assisted modification of thin film materials
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Embodiment Construction

[0020] In order to overcome the above-mentioned and other shortcomings existing in laser-based thin film material processing, some embodiments of particle-based processing are disclosed. Particle-based processing can be advantageous when it can cause a non-equilibrium process. In addition, particle parameters can be controlled more accurately than laser parameters. Particle parameters may include spatial parameters (eg beam size and current density), particle flux (and / or beam current), particle species and particle dose, among others.

[0021] In the present invention, a beamline ion implantation system and a plasma based substrate processing system (such as a plasma assisted doping (PLAD) system or a plasma immersion ion system are disclosed Some embodiments of the plasmaimmersion ion implantation (PIII) system). However, one of ordinary skill in the art will appreciate that the present invention is also applicable to other systems, including other types of particle-based ...

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Abstract

Several examples of a method for processing a substrate are disclosed. In a particular embodiment, the method may include generating a continuous particle beam containing a plurality of particles; and introducing the continuous particle beam to a region of the substrate in an amorphous phase and transforming the region from the amorphous phase to a crystalline phase, wherein the continuous particle beam has a current density of 5 x 1014 particles / cm2sec or greater.

Description

[0001] This application is co-pending Application No. 12 / 269,276 "Particle Beam Assisted Modification of Thin Film Materials", filed Nov. 12, 2008 and co-pending Application No. 12, filed Nov. 12, 2008 / 269,344 "Particle Beam Assisted Modification of Thin Film Materials", which is incorporated by reference in its entirety. technical field [0002] The present invention relates to a system and technology for processing a substrate, and more particularly to a system and technology for forming a substrate crystalline phase. Background technique [0003] Emerging technologies that are commonly used today, such as flat panel displays (FPDs) and solar cells, depend on the ability to fabricate electronic components on low-cost substrates. In the manufacture of FPDs, the pixels of a typical low-cost FPD are switched by thin film transistors (TFTs), which are generally thin amorphous films disposed on an inert glass substrate. Manufactured on silicon thin film (50nm thick). However...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/26H01L31/042H01L29/786
CPCH01L21/268H01L31/182H01L21/02532H01L31/202H01L21/02422C30B29/06H01L21/02689Y02E10/546H01L31/0747H01L21/0237C30B1/023Y02P70/50
Inventor 乔纳森·吉罗德·英格兰法兰克·辛克莱约翰(本雄)·具拉杰许·都蕾卢多维克·葛特
Owner VARIAN SEMICON EQUIP ASSOC INC