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Method for forming self-aligned silicide area block film pattern

A self-aligned silicide and barrier film technology, which is applied in the field of semiconductor manufacturing, can solve the problems of easy leakage of contact holes, and achieve the effect of easy control

Inactive Publication Date: 2013-07-24
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

That is to say, metal silicide layers are formed where metal silicide layers should not be formed (places where contact holes are to be made), because metal silicides, such as Co and Ni, have strong penetrability, and will be used in subsequent production After the CT is formed, leakage is easy to occur in the contact hole

Method used

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  • Method for forming self-aligned silicide area block film pattern
  • Method for forming self-aligned silicide area block film pattern
  • Method for forming self-aligned silicide area block film pattern

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Embodiment Construction

[0030] In order to make the objectives, technical solutions, and advantages of the present invention more clear, the present invention will be described in further detail below with reference to the accompanying drawings and embodiments.

[0031] The present invention uses schematic diagrams to describe the embodiments in detail. When describing the embodiments of the present invention in detail, for the convenience of explanation, the schematic diagram showing the structure will not be partially enlarged according to the general scale, which should not be taken as a limitation of the present invention. In actual production, the three-dimensional spatial dimensions of length, width and depth should be included. And some well-known structures unrelated to the present invention will not be repeated here.

[0032]In the present invention, the photoresist adhesive layer covered on the SAB film is exposed and developed, and the photoresist adhesive layer is divided into multiple se...

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Abstract

The invention discloses a method for forming a self-aligned silicide area block (SAB) film pattern. The method comprises the following steps of: depositing an SAB film, wherein the SAB film simultaneously covers a shallow trench isolation (STI) area and a contact hole position; coating a photo-resist layer on the SAB film; exposing and developing to form a patterned photo-resist layer, wherein the patterned photo-resist layer is sectioned at the STI; and etching the SAB film to form the SAB film pattern by taking the patterned photo-resist layer as a mask. By the method, after the contact hole is formed during the subsequent manufacturing, the electric leakage phenomenon is effectively prevented.

Description

technical field [0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular, to a method for forming a self-aligned silicide region barrier film pattern. Background technique [0002] At present, with the development of semiconductor devices, self-aligned metal silicides such as self-aligned nickel silicon and titanium silicon have been introduced to generate silicides, which can well interact with exposed source, drain and polysilicon gates. silicon (Si) alignment. This is because the metals nickel (Ni), titanium (Ti) or cobalt (Co) can react with silicon, but not with silicon oxides such as silicon dioxide (SiO 2 ), silicon nitrides such as silicon nitride (Si 3 N 4 ) or a silicon oxynitride (SiON) reaction. Therefore, Ni, Ti or Co will only find the part of silicon to react, while for silicon oxides such as silicon dioxide (SiO 2 ), silicon nitrides such as silicon nitride (Si 3 N 4 ) or the part covered by silicon ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/28G03F7/00
Inventor 杨帆张海英林竞尧王培仁
Owner SEMICON MFG INT (SHANGHAI) CORP