Beta ray detector based on silicon carbide triode

Abstract

The invention discloses a beta ray detector based on a silicon carbide triode and a manufacturing method thereof, which mainly solves the problems of low sensitivity, poor irradiation resistance property and high working voltage of the existing beta ray detector. The beta ray detector successively comprises an emitting electrode ohmic contact (1), an emitting region (2) with the dosage concentration of 1*1019 to 3*1019cm<3>, a p type base region epitaxial layer (3) with the thickness of 0.5 micrometer and the dosage concentration of 1*1017 to 5*1017cm<3>, an n type current collecting region epitaxial layer (4) with the dosage concentration 5*1014 to 5*1015cm<3>, an n type high-doping SiC substrate with the dosage concentration 1*1018 to 7*1018cm<3> and a collecting electrode ohmic contact (6) on the back surface of the substrate from top to bottom, wherein the emitting electrode ohmic contact (1) comprises one horizontal grid and multiple vertical grids; the width h of the vertical grids is 5 micrometers, and the space is 8 to 12 times of the width of the grids; and the width of the horizontal grid is 2 to 10 times of the width of the vertical grids, and the length is 1 to 10 times of the length of the vertical grids. The beta ray detector works at 300 DEG C, has the advantages of strong radiation resistance, high sensitivity and low working voltage, and can be used for the field of radiation monitoring.

Description

technical field [0001] The invention belongs to the field of microelectronics, and in particular relates to a beta-ray detector based on a silicon carbide triode, which can be used to detect beta-rays in the environment. technical background [0002] Solid-state β-ray detectors can be roughly divided into two types: semiconductor type and scintillation type. The basic working principle of the semiconductor β-ray detector is that the incident electrons lose energy in the semiconductor material to generate electron-hole pairs, and the number of these electron-hole pairs is proportional to the energy loss of the electrons in the material. The semiconductor material is silicon or germanium. [0003] The use of semiconductor detectors as radiation detection media began in the 1960s. It has high energy resolution and can easily study the fine structure of complex energy spectra. In addition, it also has the advantages of wide linear range, short pulse rise time, and small size. ...

AI Technical Summary

Problems solved by technology

However, most of the existing semiconductor detectors are based on Si or HPGe, and most of them are required to be stored or used at a liquid nitrogen temperature of 77K. Due to the use of cryogenic containers and vacuum chambers, the total volume of the detector is increased, and liquid nitrogen must be added frequently , can not be used in the harsh environment of the field, so its application range is limited; Si and HPGe will produce serious radiation damage defects in semiconductors when they are irradiated by high-energy particles, which will degrade or even fail the device performance; and most of them use pn junctions, The pin or Schottky junction structure has low detection efficiency and sensitivity. Although avalanche detectors can achieve high detection efficiency and detection sensitivity, they need to apply a high voltage.

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