Silicon-based photonic crystal channel-shaped waveguide micro-cavity laser

Abstract

The invention discloses a silicon-based photonic crystal channel-shaped waveguide micro-cavity laser. The laser is constructed by introducing a channel-shaped waveguide into a single-line defect waveguide of a two-dimensional flat slab air hole-type photonic crystal on top silicon of a silicon-on-insulator (SOI) substrate and filling a light emitting material with refractive index less than that of the top silicon of the SOI substrate in the channel-shaped waveguide and the air hole, wherein the channel-shaped waveguide comprises a first channel-shaped waveguide, a second channel-shaped waveguide and a third channel-shaped waveguide which are connected in turn; and the width of the second channel-shaped waveguide serving as the micro-cavity is greater than those of the first channel-shaped waveguide and the third channel-shaped waveguide. The structure can combine photonic crystal mode and forbidden band local area mode limitation effect, slow light effect and strong field limitation effect of the channel-shaped waveguide and greatly improve the interaction of light and the light emitting material, so that the luminous efficiency of the silicon base is greatly enhanced to realize low-threshold value lasing.

Description

technical field [0001] The invention relates to the technical field of semiconductor light emitting devices, in particular to a silicon-based photonic crystal groove waveguide microcavity laser. Background technique [0002] Integrated circuits developed on silicon materials have become the key to the development of information technologies such as electronic computers, communications, and automatic control. Silicon, as a microelectronic material, has accomplished the task excellently. With the increasing development of information technology, higher requirements are placed on the transmission speed, storage capacity and processing function of information, but the device size in silicon integrated circuits and the movement speed of electrons in silicon limit the development of this technology. If optoelectronic technology can be introduced into silicon chips and light waves are used instead of electrons as information carriers, the speed of information transmission and proce...

AI Technical Summary

Problems solved by technology

[0003] Various passive devices and some active devices based on silicon, such as optical waveguides, filters, detectors, etc., have been deeply studied and well applied in the field of optical communication, but there are certain problems in the production of light-emitting devices made of silicon materials.

Since silicon is an indirect bandgap semiconductor, electrons cannot directly transition from the bottom of the conduction band to the top of the valence band to emit photons, but can only indirectly transition to the top of the valence band by emitting or absorbing a phonon. The probability of this indirect transition is very small, so Silicon has very low luminous efficiency

[0004] At present, light-emitting devices mainly use GaAs, InP and other direct bandgap III-V semiconductor materials with high luminous efficiency. Semiconductor lasers using these materials as active regions have dominated the field of optoelectronics, but their chemical and physical properties are different from those of silicon. Different, its manufacturing process is not compatible with the standard silicon microelectronics process, and is not suitable for silicon-based optoelectronic integrated circuits

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