Chemisorption method for preparing carbon nitride film
A technology of chemical adsorption and carbon nitride, which is applied in chemical instruments and methods, gaseous chemical plating, and from chemically reactive gases, etc., can solve the problem that the atomic ratio of carbon and nitrogen does not meet the requirement of 3:4, and achieve consistent sexual effect
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Embodiment 1
[0027] A chemical adsorption method for preparing a carbon nitride film by atomic layer deposition, comprising the steps of:
[0028] Step 101, treating the surface of the silicon (111) substrate with hydrogen for 20 minutes to form Si-H bonds on the surface, such as figure 1 As shown in figure a;
[0029] Step 102, place the hydrogen-treated silicon substrate in the reaction chamber of the ALD equipment, and after passing in argon gas for 5 minutes, pass in diazomethane gas, and at the same time, irradiate with ultraviolet light to decompose the diazomethane and decompose the chemical expression The formula is: Such as figure 1 As shown in Figure b; the decomposition product carbene (: CH2) undergoes an insertion reaction with the silicon substrate, the expression: That is, a methyl structure is formed on the surface of the substrate, such as figure 1 As shown in figure c;
[0030] Step 103, feed gaseous iodine elemental substance into the reaction chamber of ALD for 5...
Embodiment 2
[0034] A chemical adsorption method for preparing a carbon nitride film by atomic layer deposition, comprising the steps of:
[0035] Step 101, fixing the Si(111) substrate in the reaction chamber of the atomic layer deposition equipment;
[0036] Step 102, after feeding argon gas for 5 minutes, feed methyl mercury iodide gas, such as Figure 4 As shown in the figure a in the middle, it is heated at a low temperature under the condition of 50°C-200°C to decompose methylmercuric iodide. The decomposition expression is: Such as Figure 4 As shown in figure b in the middle; the decomposition product methyl group is bonded to the silicon substrate, that is, the structure of the methyl group is formed on the substrate surface, such as Figure 4 As shown in figure c;
[0037] Step 103, feed gaseous iodine elemental substance into the reaction chamber of ALD for 5 minutes, and irradiate with sunlight simultaneously, such as figure 2 As shown in the figure a, the substitution re...
Embodiment 3
[0041] A chemical adsorption method for preparing a carbon nitride film by atomic layer deposition, comprising the steps of:
[0042] Step 101, fixing the silicon (111) substrate in the reaction chamber of the atomic layer deposition equipment;
[0043] Step 102, after argon gas is introduced for 5 minutes, monoiodomethane gas is introduced, and at the same time, iodomethane is irradiated with ultraviolet light to decompose monoiodomethane, and the decomposition chemical expression is as follows: Such as Figure 5 As shown in figure b in the middle; the decomposition product methyl group bonds with the silicon substrate and forms a methyl group structure on the substrate surface, such as Figure 5 As shown in figure c;
[0044] Step 103, feed gaseous iodine elemental substance into the reaction chamber of ALD for 5 minutes, and irradiate with sunlight simultaneously, such as figure 2 As shown in the figure a, the substitution reaction occurs on the surface of the substrat...
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