Unlock instant, AI-driven research and patent intelligence for your innovation.

Process for manufacturing a structure comprising a germanium layer on a substrate

A manufacturing method and structure technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc.

Inactive Publication Date: 2011-04-13
SOITEC SA
View PDF7 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In fact, bubbles formed at the bonding interface, which did not allow satisfactory transfer of the germanium layer to the substrate

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Process for manufacturing a structure comprising a germanium layer on a substrate
  • Process for manufacturing a structure comprising a germanium layer on a substrate
  • Process for manufacturing a structure comprising a germanium layer on a substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0054] Various possible embodiments of forming a structure comprising a germanium layer 3 overlying a support substrate 1 in which the electrical properties of said germanium layer and the interface between said germanium layer and the underlying layer are optimized will now be described.

[0055]As a general rule, the method basically consists of two consecutive steps, which are as follows:

[0056] (a) Form an intermediate structure (10), which comprises a support substrate 1, SiO 2 layer 20 and with the SiO 2 Layer 20 is in direct contact with layer 3 of germanium. figure 1 The intermediate structure 10 is illustrated in FIG. The different ways of making this structure will be described in detail below.

[0057] (b) applying heat treatment to the intermediate structure to make the SiO 2 Oxygen diffusion of at least a portion of layer 20, thereby making the SiO 2 Layer 20 is fully or partially decomposed.

[0058] SiO 2 Oxygen Diffusion Treatment

[0059] The a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention relates to a process for manufacturing a structure comprising a germanium layer (3) on a support substrate (1), characterised in that it comprises the following steps: (a) formation of an intermediate structure (10) comprising said support substrate (1), a silicon oxide layer (20) and said germanium layer (3), the silicon oxide layer (20) being in direct contact with the germanium layer (3), (b) application to said intermediate structure (10) of a heat treatment, in a neutral or reducing atmosphere, at a defined temperature and for a defined time, to diffuse at least part of the oxygen from the silicon oxide layer (20) through the germanium layer (3).

Description

technical field [0001] The invention relates to a method for manufacturing a structure comprising a germanium layer on a substrate. Background technique [0002] The manufacture of semiconductor layers comprising a germanium layer on a substrate in which an insulating layer can optionally be interposed between the germanium layer and the substrate is particularly promising in the fields of microelectronics, optoelectronics and optoelectronics . [0003] Indeed, germanium has more favorable electrical properties than silicon, in particular due to the greater mobility of charges (electrons and holes) in the germanium material. [0004] Therefore, germanium-on-insulator (also known as GeOI) structures can be advantageously used to form MOS transistors. [0005] Taking advantage of the narrow bandgap of germanium and its lattice parameters compatible with the formation of other active layers (e.g. AsGa, InP, etc.), these structures are also beneficial for the fabrication of ph...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/762
CPCH01L21/2007H01L21/76256H01L21/76254
Inventor 尼古拉斯·达瓦尔奥列格·科农丘克埃里克·圭奥特塞西尔·奥尔内特法布里斯·拉勒门特克里斯托夫·菲盖迪迪埃·朗德吕
Owner SOITEC SA