Interconnecting structure and forming method thereof

Abstract

The invention relates to an interconnecting structure and a forming method thereof. The interconnecting structure comprises a substrate; a metal wiring layer formed on the surface of the substrate; a first barrier layer formed on the surface of the metal wiring layer; a first interlayer insulation layer formed on the surface of the first barrier layer; a second barrier layer formed on the surface of the first interlayer insulation layer; a second interlayer insulation layer formed on the surface of the second barrier layer; a protective layer formed on the surface of the second interlayer insulation layer; a contact hole formed in the first barrier layer and the first interlayer insulation layer and exposing part of the metal wiring layer; and a groove formed in the second barrier layer, the second interlayer insulation layer and the protective layer and exposing part of the first interlayer insulation layer and the metal wiring layer. The invention ensures that the height of the groove of the interconnecting structure can be accurately defined.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to an interconnection structure and a forming method thereof. Background technique [0002] With the rapid development of semiconductor device manufacturing technology, semiconductor devices already have deep submicron structures. As the number of devices contained in integrated circuits continues to increase, and the size of devices continues to shrink due to the increase in integration, the high-performance, high-density connections between devices are not only performed in a single interconnection layer, but also in multiple layers. interconnection between. Therefore, a multilayer interconnection structure is generally provided in which a plurality of interconnection layers are stacked on each other with an interlayer insulating film interposed therebetween for connecting semiconductor devices. In particular, a multi-layer interconnection structure formed by a dual-da...

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Problems solved by technology

[0011] In the existing interconnect structure process, the etching trench is usually formed by controlling the etching time through the data obtained from the end-point of the test. Therefore, in actual production, due to differences in equipment and different batches of thin film production Due to quality differences and other reasons, there is a certain difference between the height of the groove formed by etching and the height of the groove actually required, and the difference will cause the electrical performance of the interconnection structure to drift.

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