Pattern formation method using levenson-type mask and method of manufacturing levenson-type mask
A Levenson-type, graphic technology, which is applied to the photolithographic process of the patterned surface, the original for photomechanical processing, semiconductor/solid-state device manufacturing, etc. Membrane peeling and other problems
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Embodiment approach 1
[0058] Reference Figure 1 to Figure 9 A description will be given of a pattern forming method based on Embodiment 1 of the present invention. In this embodiment, a method of manufacturing a semiconductor device will be described as an example. In this embodiment, a Levenson type mask and a halftone type mask among the phase shift masks are used, and multiple exposures are performed.
[0059] figure 1 It is a schematic plan view showing a figure arranged on the surface of the object to be processed in this embodiment. In this embodiment, a resist pattern 10 is formed on the surface of the substrate 9 as the object to be processed. In the substrate 9 of this embodiment, a conductive film such as polysilicon is arranged on the surface of a silicon wafer. In addition, an organic anti-reflection film with a thickness of 80 nm was formed on the surface of the polysilicon film. In this embodiment, patterning of the resist arranged on the organic anti-reflection film is performed. T...
Embodiment approach 2
[0102] Reference Figure 10 to Figure 15 A description will be given of a pattern forming method according to Embodiment 2 of the present invention. In this embodiment mode, as in Embodiment Mode 1, a first exposure step of exposure using a Levenson type mask and a second exposure step of exposure using a halftone type mask are included. In addition, when the second minimum size of the second pattern is 1.3 times or more the first minimum size of the first pattern, as in Embodiment 1, the exposure amount in the second exposure step is set to be equal to or less than the exposure amount in the first exposure step. In this embodiment, in the second exposure step, exposure is performed by using a semi-transmissive mask that reduces the transmittance of the halftone portion. In this embodiment, the test was performed by the same test method as in the first embodiment.
[0103] Picture 10 It is the first graph illustrating the first test result of this embodiment. Picture 11 A seco...
Embodiment approach 3
[0114] Reference Figure 16 to Figure 20 A description will be given of a pattern forming method according to Embodiment 3 of the present invention. In the pattern forming method of the present embodiment, as in the first embodiment, it includes a first exposure step of exposure using a Levenson type mask and a second exposure step of exposure using a halftone type mask. In this embodiment, when the second minimum size of the second pattern is 1.0 times or more and 1.1 times or less the first minimum size of the first pattern, the exposure amount of the second exposure step is set to be higher than that of the first exposure step. The exposure is large.
[0115] Figure 16 It is a schematic plan view of the resist pattern of this embodiment. On the surface of the substrate 9, resist patterns 11 to 13 are formed. The resist pattern 13 is arranged at a position sandwiched between the resist pattern 11 and the resist pattern 12. The resist pattern 13 is formed of a halftone type ...
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Abstract
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