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Bar type light emitting element, method of manufacturing the same, backlight, illumination device and display device

A light-emitting element and a rod-shaped structure technology, which is applied in the field of rod-shaped light-emitting elements, can solve the problems of reduced light extraction efficiency, poor heat dissipation efficiency, and low degree of freedom

Active Publication Date: 2011-05-25
SHARP KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, since the rod-shaped structure light-emitting element uses a substrate provided with a plurality of nanoscale rods together, it is restricted by the substrate when it is incorporated into a lighting device or a display device, and there is a problem that the degree of freedom of mounting to the device is low.
[0006] Furthermore, in the light-emitting device including the above-mentioned rod-shaped light-emitting element, in the state where a plurality of rods are erected on the substrate, most of the light is radiated sideways and absorbed by adjacent rods, so there is a problem that the extraction efficiency of light decreases.
In addition, in the rod-shaped structure light-emitting element, since a plurality of rods are erected on the substrate, there is a problem of poor heat dissipation efficiency.

Method used

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  • Bar type light emitting element, method of manufacturing the same, backlight, illumination device and display device
  • Bar type light emitting element, method of manufacturing the same, backlight, illumination device and display device
  • Bar type light emitting element, method of manufacturing the same, backlight, illumination device and display device

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no. 1 Embodiment approach

[0475] figure 1 A perspective view showing a rod-shaped light-emitting element according to the first embodiment of the present invention. The rod-shaped light-emitting element of the first embodiment is, for example, figure 1 As shown, semiconductor core 11 is composed of rod-shaped n-type GaN having a substantially circular cross section; and semiconductor layer 12 is composed of p-type GaN formed so as to cover a part of semiconductor core 11 . In the above-mentioned semiconductor core 11, an exposed portion 11a in which the outer peripheral surface on the end side is exposed is formed. Furthermore, the end surface on the other end side of the semiconductor core 11 is covered with the semiconductor layer 12 .

[0476] The rod-shaped light-emitting element described above was produced as follows.

[0477] First, a mask having growth holes is formed on a substrate made of n-type GaN. The mask uses silicon oxide (SiO 2 ) or silicon nitride (Si 3 N 4 ) and the like that ...

no. 2 Embodiment approach

[0490] figure 2 A perspective view showing a rod-shaped light-emitting element according to a second embodiment of the present invention. The rod-shaped light-emitting element of the second embodiment is, for example, figure 2 As shown, it is provided with: a semiconductor core 21 composed of rod-shaped n-type GaN with a substantially circular cross section; a quantum well layer 22 composed of p-type InGaN formed to cover a part of the semiconductor core 21; and a semiconductor layer 23, It consists of p-type GaN formed so that the said quantum well layer 22 may be covered. In the above-mentioned semiconductor core 21, an exposed portion 21a in which the outer peripheral surface on the end side is exposed is formed. In addition, the end surface on the other end side of the semiconductor core 21 is covered with the quantum well layer 22 and the semiconductor layer 23 .

[0491] In the rod-shaped light-emitting element of the second embodiment, as in the rod-shaped light-em...

no. 3 Embodiment approach

[0495] image 3 A perspective view showing a rod-shaped light-emitting element according to a third embodiment of the present invention. The rod-shaped light-emitting element of the third embodiment is, for example, image 3 As shown, it includes: a semiconductor core 11 made of bar-shaped n-type GaN with a substantially circular cross section; a semiconductor layer 12 made of p-type GaN formed to cover a part of the semiconductor core 11; and a transparent electrode 13 made of formed to cover the above-mentioned semiconductor layer 12 . In the above-mentioned semiconductor core 11, an exposed portion 11a in which the outer peripheral surface on the end side is exposed is formed. Furthermore, the end surface on the other end side of the semiconductor core 11 is covered with the semiconductor layer 12 and the transparent electrode 13 . The above-mentioned transparent electrode 13 is formed of ITO (indium tin oxide) having a film thickness of 200 nm. The film formation of IT...

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Abstract

The invention relates to a bar type light emitting element, a method of manufacturing the same, a backlight, an illumination device and a display device. In order to easily connect electrodes and realize high light emitting efficient, the bar type light emitting element is provided with: a bar type first conductive semi-conductor core; a second conductive semiconductor layer formed via a mode of covering the semiconductor core. The outer circumference of one part of the semiconductor core is exposed.

Description

technical field [0001] The invention relates to a rod-shaped structure light-emitting element, a manufacturing method of the rod-shaped structure light-emitting element, a backlight, an illuminating device and a display device. Background technique [0002] Conventionally, as a rod-shaped light-emitting device, there is a rod-shaped core part composed of a compound semiconductor, and a cylindrical shell part composed of a compound semiconductor surrounding the core part to form a nano-scale element (Heterostructures) ( For example, refer to Patent Document No. 2008-235443). The core portion of the light-emitting element itself becomes an active layer, and electrons and holes injected from the outer peripheral surface are recombined in the core portion to emit light. [0003] Using the same manufacturing method as the above-mentioned light-emitting element, a pn junction having a core portion composed of an n-type semiconductor and a shell portion composed of a p-type semico...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/20H01L33/24H01L33/38H01L33/44H01L33/00
CPCH01L33/007H01L33/20H01L33/32H01L33/38H01L33/62H01L2224/48463H01L2924/3025
Inventor 根岸哲柴田晃秀森下敏小宫健治岩田浩高桥明
Owner SHARP KK