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Crystal orientation selected polarization state controllable microchip laser

A microchip laser and crystal orientation technology, applied in the field of lasers, can solve the problems of expensive lasers, and achieve the effects of high power, high beam quality, and high optical conversion efficiency

Inactive Publication Date: 2011-05-25
XIAMEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These research results of Nd:YAG crystal orientation on linearly polarized laser require a linearly polarized pump source and a special crystal cutting direction, which not only makes the laser expensive, but also is not suitable for Nd:YAG or Yb:YAG crystals grown in the traditional direction Applications in Microchip Lasers

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  • Crystal orientation selected polarization state controllable microchip laser
  • Crystal orientation selected polarization state controllable microchip laser
  • Crystal orientation selected polarization state controllable microchip laser

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Embodiment Construction

[0015] see figure 1 The crystal orientation selective polarization controllable microchip laser in the embodiment of the present invention is provided with a pumping source 1, an isolator 2, a first lenticular lens 3, a second lenticular lens 4 and a Yb:YAG crystal 5; the pumping The source 1 adopts a 940nm laser diode, and the isolator 2, the first lenticular lens 3, the second lenticular lens 4 and the Yb:YAG crystal 5 are successively arranged on the output laser optical axis of the pumping source 1, and the Yb:YAG crystal 5 The rear surface is plated with an anti-reflection film of 940nm and a high reflection film of 1030nm, as the back cavity surface 7 of the microchip laser, the reflectivity of the high anti-mold is greater than 99%, and the front surface of the Yb:YAG crystal is plated with a part of 1030nm The emission film and the 940nm anti-reflection film are used as the front cavity mirror 6 of the laser.

[0016] The laser light output by the laser diode passes t...

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Abstract

The invention provides a crystal orientation selected polarization state controllable microchip laser, relating to a laser. The laser is provided with a pumping source, an isolator, a first lenticular lens, a second lenticular lens and a Yb:YAG crystal, wherein the pumping source adopts a 940nm laser diode; the isolator, the first lenticular lens, the second lenticular lens and the Yb:YAG crystal are arranged on an output laser optical axis of the pumping source in sequence; a 940nm anti-reflection film and a 1030nm highly reflective film are coated on the rear surface of the Yb:YAG crystal and the rear surface serves as the rear cavity surface of the microchip laser; the reflectivity of the highly reflective film is more than 99%; and a 1030nm partial transmission film and a 940nm anti-reflection film are coated on the front surface of the Yb:YAG crystal and the front surface serves as the front cavity mirror of the laser. The laser can obtain higher brightness and power than the original polarization state selection technology and the output laser can have purer polarization state.

Description

technical field [0001] The invention relates to a laser, in particular to a crystal orientation selective polarization state controllable microchip laser. Background technique [0002] Yttrium aluminum garnet crystals doped with rare earth ions (Y 3 al 5 o 12 , that is, YAG) occupies a pivotal position in the current field of solid-state lasers, especially Yb:YAG crystal has a wide absorption band, long fluorescence lifetime, high doping concentration and high quantum efficiency, under the same pump power, The heat generated by Yb:YAG pumping is only one-third of that of Nd:YAG. End-pumped, side-pumped rod lasers and thin-sheet lasers have obtained continuous laser output of kilowatts or even tens of kilowatts. Yb:YAG crystals with high doping concentration are very suitable for the development of microchip lasers. Yb:YAG microchip lasers based on passive Q-switching have achieved sub-nanosecond laser output with peak power up to hundreds of kilowatts. Therefore, Yb:YAG ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/136H01S3/00H01S3/06
Inventor 董俊
Owner XIAMEN UNIV