Light emitting diode chip and manufacturing method thereof
A technology of light-emitting diodes and manufacturing methods, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of reduced reflection efficiency of mirrors and easy peeling off of metal layers, so as to improve light extraction efficiency, optimize film thickness, and overcome metal clusters. cluster effect
Inactive Publication Date: 2013-04-24
EPILIGHT TECH +2
View PDF0 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
However, when preparing such mirrors, directly on SiO 2 The metal layer on the upper layer often encounters the problem that the metal layer is easy to fall off, and metal clusters are easily generated due to heating in the subsequent wire bonding process of the metal layer. These problems greatly reduce the reflection efficiency of the mirror.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0042] The specific implementation steps of the present invention will be further described below in conjunction with the accompanying drawings, which are not drawn to scale for the convenience of illustration.
[0043] Please see figure 2 , a light-emitting diode chip, comprising a sapphire substrate 10, a semiconductor epitaxial layer in turn, the semiconductor epitaxial layer at least includes an n-type semiconductor layer 21, an active layer 22 located on the n-type semiconductor layer 21, and an active layer located on the active layer 22 On the p-type semiconductor layer 23, an n-electrode 40 is provided on the n-type semiconductor layer 21, and a transparent conductive layer 30 (ITO layer or Ni / Au layer) and a p-electrode 50 are provided on the p-type semiconductor layer 23, It is characterized in that: a reflector with a composite structure is prepared on the back of the substrate 10, and the reflector with a composite structure consists of a dielectric layer 11, an A...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention discloses a light emitting diode chip and a manufacturing method thereof, wherein the light emitting diode chip is characterized in that a reflecting mirror of a compound structure is prepared at the back surface of a substrate; the reflecting mirror of the compound structure is provided with a dielectric layer with the refractive index of 1.1-1.6, an Al film layer and a secondary metal layer sequentially from the substrate till the downward; and the secondary metal layer is preferably an Ag frilm layer, and the reflecting mirror can be prepared by using or employing] a coating method, a PECVD (plasma enhanced chemical vapor deposition) method, an electron beam evaporation method or a sputtering method. According to the invention, because the reflecting mirror of a SiO2 / Al / Ag compound structure is adopted, the problem that Ag has high possibility of falling off as Ag is directly plated on SiO2 is solved, and the metal cluster phenomenon has high possibility of occurring as the Ag membranous layer is heated in a subsequent wire bonding technology is overcome, thus the light emergent efficiency of the chip is improved by more than 25%.
Description
technical field [0001] The invention relates to a light-emitting diode chip and a manufacturing method thereof, in particular to a light-emitting diode chip and a manufacturing method thereof which are coated with reflective mirrors on the back of the chip and can improve the light-emitting efficiency of the chip. Background technique [0002] Light-emitting diodes have the advantages of small size, high efficiency and long life, and are widely used in traffic indication, outdoor full-color display and other fields. In particular, the use of high-power light-emitting diodes may realize semiconductor solid-state lighting, which has caused a revolution in the history of human lighting, and has gradually become a research hotspot in the field of electronics. [0003] Generally, a light-emitting diode chip has a structure in which an n-type semiconductor layer, an active layer, and a p-type semiconductor layer are sequentially stacked on a substrate such as sapphire. In additio...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/10
Inventor 张楠朱广敏潘尧波郝茂盛齐胜利陈志忠张国义
Owner EPILIGHT TECH