Infrared organic electroluminescent device
An electroluminescent device and luminescence technology, which is applied in the fields of electric solid-state devices, electrical components, organic chemistry, etc., can solve the problems of OLED chromaticity, lack of stability, composite light-emitting area deviation, etc., and achieve good chromaticity and long life , high efficiency effect
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Embodiment 1
[0057] Device structure: ITO / NPB(20nm) / ADN:RD-1(40nm, 1%) / C8(20nm) / LiF(0.5nm) / Al(150nm)
[0058] With the ITO conductive glass substrate etched with specific patterns as the substrate, the substrate is ultrasonically cleaned in deionized water containing cleaning solution. The temperature of the cleaning solution is about 60°C, and then the cleaned substrate is cleaned Dry it, put it into the evaporation chamber to evaporate the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer, the electron injection layer, and the cathode structure in sequence, and the chamber pressure during the evaporation process is lower than 5.0×10 -3 Pa.
[0059] In this embodiment, 20 nm of NPB is deposited on the surface of the ITO anode as a hole transport layer. The thickness of the light-emitting layer is 40nm, 9,10-bis(2-naphthyl)anthracene (ADN) is the main body, the doping dye is RD-1, and the doping ratio is 1%. Deposit 20 nm of compound C...
Embodiment 2
[0061] Device structure: ITO / NPB(20nm) / ADN:RD-6(30nm, 0.5%) / C10(15nm) / LiF(0.5nm) / Al(150nm)
[0062] The device with the above structure was prepared according to the method of Example 1, except that the thickness of the luminescent layer was 30nm, RD-5 was used as the luminescent dye, the doping ratio was 0.5%, and C10 was the electron transport material with a thickness of 15nm.
Embodiment 3
[0064] Device structure: ITO / NPB(20nm) / NNPA:RD-8(40nm, 2%) / C51(10nm) / LiF(0.5nm) / Al(150nm)
[0065] The device with the above structure was prepared according to the method of Example 1, except that 9-(2-naphthyl)-10-[3-(2-naphthyl)phenyl]anthracene (NNPA) was used as the main body of the light-emitting layer, and RD-8 It is a luminescent dye, the doping ratio is 2%, the electron transport material is C51, and the thickness is 10nm.
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