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Method for depositing film by using LPCVD process

A technology of thin film and deposition process, which is applied in the field of improving the deposition of thin film by LPCVD process, can solve the problems of different total thermal budget, different temperature, different temperature, etc., to improve yield, reduce thermal budget difference, and reduce manufacturing cost effect

Active Publication Date: 2013-03-13
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0036] That is to say, in the prior art, after the crystal boat loading stage is completed and before the crystal boat unloading stage starts, the temperatures of the various temperature zones in the heater of the LPCVD furnace tube are not the same, and the temperature values ​​of each temperature zone are according to The positions of the temperature zones decrease in order from top to bottom, so that the temperature of each area on the wafer boat is different. The total thermal budget of each wafer in the entire process flow is not the same

Method used

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  • Method for depositing film by using LPCVD process
  • Method for depositing film by using LPCVD process
  • Method for depositing film by using LPCVD process

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Embodiment 1

[0094] Figure 5 It is a flow chart of the method in Embodiment 1 of the present invention. Figure 6 It is a schematic diagram of the temperature curve in Example 1 of the present invention. combine Figure 5 , Figure 6 As shown, the above step 402 can be realized through the following steps:

[0095] Step 501 , in the loading stage of the crystal boat, the temperature of each temperature zone in the heater of the furnace tube is gradually increased to the same predetermined temperature value.

[0096] In the crystal boat loading stage in the prior art, the temperature of each temperature zone in the heater of the furnace tube will gradually increase to different temperature values, such as image 3 shown. Therefore, when the loading phase of the wafer boat is completed, the temperatures of the above-mentioned temperature zones are not the same, and the temperature values ​​of each temperature zone decrease sequentially according to the position of each temperature zone...

Embodiment 2

[0107] Figure 7 It is a flow chart of the method in Embodiment 2 of the present invention. Figure 8 It is a schematic diagram of the temperature curve in Example 2 of the present invention. combine Figure 7 , Figure 8 As shown, the above step 402 can be realized through the following steps:

[0108] Step 701, during the loading stage of the crystal boat, gradually increase the temperature of each temperature zone in the heater of the furnace tube to each preset temperature value, so that the temperature values ​​of each temperature zone increase from the top to the bottom according to the position of each temperature zone. The order to the next increases sequentially.

[0109] In the prior art, when the crystal boat loading phase is completed, the temperature values ​​of the temperature in each temperature zone will decrease sequentially according to the position of each temperature zone from top to bottom, that is, the temperature in the lower temperature zone will be...

Embodiment 3

[0120] Figure 9 It is a flow chart of the method in Embodiment 3 of the present invention. Figure 10 It is a schematic diagram of the temperature curve in Example 3 of the present invention. combine Figure 9 , Figure 10 As shown, the above step 402 can be realized through the following steps:

[0121] Step 901, in the post-cleaning stage, gradually increase the temperature of each temperature zone in the heater of the furnace tube to the same predetermined temperature value.

[0122] Such as image 3 As shown, in the post-cleaning stage in the prior art, the temperature values ​​of each temperature zone in the heater of the furnace tube decrease sequentially according to the position of each temperature zone from top to bottom. For example, the temperature value of the upper temperature zone is greater than the temperature value of the lower temperature zone. Therefore, the wafers loaded in different areas of the boat will not get the same thermal budget at this stag...

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Abstract

The invention discloses a method for depositing a film by using a low pressure chemical vapor deposition (LPCVD) process. The method comprises the following steps of: keeping the temperature of each temperature zone in a heater of a furnace tube unchangeable at a stable stage and a deposition stage, wherein the temperature values of the temperature zones are sequentially reduced from top to bottom according to the positions of the temperature zones; and adjusting the temperature of each temperature zone in the heater of the furnace tube in at least one of a boat loading stage, a vacuumizing stage, a leak detection stage, a later clearing stage, a back pressure stage and a boat unloading stage. By using the method provided by the invention, the heat budget difference of wafers loaded on a boat in the film forming process can be effectively reduced, the electric performance of semiconductor components can be improved, the yield of the produced semiconductor components can be improved, and the manufacturing cost can be reduced.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for improving the deposition of thin films using LPCVD technology. Background technique [0002] In the semiconductor manufacturing process, in order to arrange discrete devices and integrated circuits, different kinds of thin films need to be deposited on the substrate of the wafer. Among various thin film deposition methods, Low Pressure Chemical Vapor Deposition (LPCVD, Low Pressure Chemical Vapor Deposition) is a commonly used method, which has been widely used in various thin film deposition processes. [0003] Taking the film to be deposited as a sidewall structure as an example, the above-mentioned LPCVD is usually used in the deposition methods of Spacer Silicon Oxide and Spacer Silicon Nitride in the prior art process to deposit the required sidewall structure on the wafer (Wafer), for example, a sidewall structure with an oxide layer-nitride layer-ox...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/52C23C16/46
Inventor 高剑鸣王秉国
Owner SEMICON MFG INT (SHANGHAI) CORP
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