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Wet-method etching monitoring method

A technology of wet etching and sheet resistance, applied in the direction of sustainable manufacturing/processing, electrical components, climate sustainability, etc., can solve the problems of no monitoring method and achieve the effect of convenient control

Inactive Publication Date: 2011-07-20
TRINASOLAR CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Using HF / HNO 3 system, etch the PN junction of the solar cell to form a selective emitter, and the amount of etching is just right, and there is currently no effective monitoring method

Method used

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Embodiment Construction

[0016] The present invention is described in further detail now in conjunction with accompanying drawing. These drawings are all simplified schematic diagrams, which only illustrate the basic structure of the present invention in a schematic manner, so they only show the configurations related to the present invention.

[0017] Such as figure 1 figure 2 Shown, a kind of wet etching monitoring method comprises the following steps:

[0018] The first step is to prepare a non-masked area pattern in the masked area 1 on the surface of the silicon wafer by printing or spraying;

[0019] The second step is to etch the mask of the pattern part of the non-masking area to form the non-masking area 2;

[0020] The third step is to measure the sheet resistance of the non-masked area 2 with a four-probe probe, and the resistance value of the sheet resistance of the non-masked area 2 is 90-160Ω.

[0021] The distance between the edge of the four-probe probe and the edge of the unmaske...

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Abstract

The invention provides a wet-method etching monitoring method comprising the following steps of: firstly, preparing a non-mask region graph in a mask region on the surface of a silicon chip by adopting a printing or spraying method; secondly, etching a mask at the graph part of the non-mask region to form the non-mask region; and thirdly, measuring square resistance of the non-mask region by using four probes, wherein the resistivity of the square resistance of the non-mask region is 90-160 omega. According to the wet-method etching monitoring method, the non-mask region is dug from the mask region and etching process points are controlled by monitoring the square resistance of the non-mask region. The wet-method etching monitoring method can ensure that the reference is applied to the process control, and is convenient for control of the etching process.

Description

technical field [0001] The invention relates to the technical field of high-efficiency solar cell manufacturing, in particular to a wet etching monitoring method. Background technique [0002] The development of solar cells is low-cost and high-efficiency, and the selective emitter structure is a method to achieve high efficiency in the production process of PN crystalline silicon solar cells. Using HF / HNO 3 System, etch the solar cell PN junction to form a selective emitter, and the etching is just right, and there is no effective monitoring method at present. Contents of the invention [0003] The technical problem to be solved by the present invention is: in order to overcome the above problems, the present invention provides a wet etching monitoring method that can effectively control the PN junction etching process point of solar cells. [0004] The technical solution adopted by the present invention to solve its technical problem is: provide a kind of wet etching m...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L21/00
CPCY02P70/50
Inventor 叶权华杨文侃杨延德
Owner TRINASOLAR CO LTD