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Method for optical proximity correction, design and manufacturing of a reticle using variable shaped beam lithography

A lithography plate and lithography technology, applied in the field of lithography, can solve the problem of long lithography plate writing time and other problems

Active Publication Date: 2014-12-31
D2S
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as OPC features become more complex, dividing or decomposing the pattern into a set of non-overlapping simple shapes can result in billions of simple shapes, resulting in very long reticle write times

Method used

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  • Method for optical proximity correction, design and manufacturing of a reticle using variable shaped beam lithography
  • Method for optical proximity correction, design and manufacturing of a reticle using variable shaped beam lithography
  • Method for optical proximity correction, design and manufacturing of a reticle using variable shaped beam lithography

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Embodiment Construction

[0064] The improvements and advantages of the present invention can be obtained by allowing overlapping VSB shots and doses other than the usual dose, allowing union of shots different from the target pattern, allowing for the comparison from traditional non-overlapping, usual dose VSB shots Reduced number of shots to create the pattern. Thus, methods and systems are provided for fabricating surfaces that address the aforementioned problems, including the long writing times and corresponding high costs associated with preparing the surfaces.

[0065] Referring now to the drawings, wherein like numerals refer to like items, figure 1An embodiment of a lithography system is shown, such as a charged particle beam writing system, in this case an electron beam writing system. The electron beam writing system 10 employs a deformable beam (VSB ) to make the surface 12. The electron beam writing system 10 has an electron beam source 14 that projects an electron beam 16 toward an ape...

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Abstract

The present invention relates to a method for optical proximity correction, design and manufacturing of a reticle using variable shaped beam lithography, and describes a method for using variable shaped beam (VSB) shots to form a desired pattern on a surface, where the union of the plurality of VSB shots deviates from the desired pattern. Additionally, the VSB shots are allowed to overlap each other, and the dosages of the shots are allowed to vary. Similar methods are disclosed for optical proximity correction (OPC), fracturing, mask data preparation, and proximity effect correction. A method for creating glyphs is also disclosed, in which patterns that would result on a surface from one or a group of VSB shots are pre-calculated. In some embodiments, an optimization technique may be used to minimize shot count. The method of the present disclosure may be used, for example, in the process of manufacturing an integrated circuit by optical lithography using a reticle, or in the process of manufacturing an integrated circuit using direct write.

Description

[0001] related application [0002] This application claims priority to: 1) U.S. Patent Application No. 12 / 202,364, filed September 1, 2008, entitled "Method and System for Manufacturing a Reticle Using Character Projection Particle Beam Lithography"; 2) 2008 U.S. Patent Application No. 12 / 202,365, filed September 1, entitled "Method For Optical Proximity Correction Of A Reticle To Be Manufactured Using Character Projection Lithography"; 3) filed September 1, 2008, entitled "Method And System For Design Of A Reticle To Be Manufactured Using Character Projection Lithography" U.S. Patent Application No. 12 / 202,366; 4) Filed on November 12, 2008 entitled "Method and System For Manufacturing a Reticle Using Character Projection Lithography" U.S. Patent Application No. 12 / 269,777; 5) U.S. Patent Application No. 12 / 473,241, filed May 27, 2009, entitled "Method For Manufacturing A Surface And Integrated Circuit Using Variable Shaped Beam Lithography"; 6) 2009 U.S. Patent Application ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/027G03F7/20
CPCH01J37/3174B82Y10/00G03F7/2061G03F7/2063B82Y40/00G03F1/36G03F1/68G03F1/78
Inventor 藤村晶兰斯·格兰瑟
Owner D2S