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Sputtering thin film forming device

A thin film and sputtering technology is applied in the field of sputtering thin film forming devices, which can solve the problems of high film forming speed and practical difficulties, and achieve the effects of improving plasma density and fast sputtering.

Active Publication Date: 2015-11-25
ELECTRO-MOTIVE DIESEL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, Patent Document 2 does not aim at high-speed film formation. In fact, since the plasma diffuses radially from the vicinity of the high-frequency antenna, it is impossible to concentrate and increase the plasma density on the target surface. As a result, film formation cannot be achieved. speed too high
For this reason, although the inductively coupled sputtering device described in Patent Document 1 can be used to produce tiny objects such as silicon nanoparticles, it is practical for producing larger objects such as thin films with a thickness of micron order. have difficulties

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0058] figure 1 (a) longitudinal sectional view and (b) plan view of the sputtered thin film forming apparatus 10 of the first embodiment (wherein, the substrate holder 14 described later is only shown in (a) and omitted in (b)) . The sputtering thin film forming device 10 has: a vacuum container 11 that can vacuum the interior by a vacuum pump (not shown), a plasma generating gas introduction unit 19 for introducing a plasma generating gas into the vacuum container, and a vacuum container installed in the vacuum container. 11 A magnetron sputtering magnet (magnetic field generating unit) 12 composed of an electromagnet on the inner wall surface of the bottom, a target holder (target holding unit) 13 provided on the upper surface of the magnetron sputtering magnet 12, a device A substrate holder (substrate holding unit) 14 facing the target holder 13 is formed. In this embodiment, the upper surface of the magnet 12 for magnetron sputtering functions as a target holder 13 . ...

Embodiment 2

[0068] Figure 4 It is (a) longitudinal sectional view and (b) plan view which show the sputtering thin film formation apparatus 20 of 2nd Example. In this embodiment, instead of the U-shaped high-frequency antenna 16 in the first embodiment, a high-frequency antenna 16A having the shape described below is used. The high-frequency antenna 16A has a shape as follows: two straight legs (first conductors) 161 extend upward from the inner wall surface of the bottom of the vacuum container 11, and extend from the two legs 161 toward the target T side. A straight arm (second conductor) 162 substantially parallel to the plate of the target T, and a straight third conductor 163 have a shape in which the tips of the two arms 162 are connected. The high-frequency antenna 16A is provided so as to protrude from the side surface of the target T in the vicinity of the surface of the target T by such a shape and arrangement. Therefore, compared with disposing the whole high-frequency anten...

Embodiment 3

[0070] Figure 5 It is a plan view showing the sputtering thin film forming apparatus 30 of the third embodiment. In the sputtering thin film forming apparatus 30 of the present embodiment, the vacuum vessel 11, the magnetron sputtering magnet 12, the target holder 13, and the substrate holder 14 are the same as those in the first and second embodiments. In the present embodiment, three radio-frequency antennas 26 are arranged along the long sides of the target T, and a total of six are arranged on each side. The high-frequency antenna 26 has the same U-shaped shape as the high-frequency antenna 16 of the first embodiment, but the length of the third conductor 263 is different for each high-frequency antenna, which is the same as that of the high-frequency antenna 16 of the first embodiment. different. Specifically, among the first high-frequency antenna 26A, the second high-frequency antenna 26B, and the third high-frequency antenna 26C arranged along the long side of the t...

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Abstract

An objective of the present invention is to provide a thin-film forming sputtering system capable of a sputtering process at a high rate. A thin-film forming sputtering system 10 includes: a vacuum container 11; a target holder 13 located inside the vacuum container 11; a target holder 13 located inside the vacuum container; a substrate holder 14 opposed to the target holder 13; a power source 15 for applying a voltage between the target holder 13 and the substrate holder 14; a magnetron-sputtering magnet 12 provided behind the target holder 13, for generating a magnetic field having a component parallel to a target T; and radio-frequency antennae 16 for generating radio-frequency inductively-coupled plasma within a space in the vicinity of the target T where the magnetic field generated by the magnetron-sputtering magnet 12 has a strength equal to or higher than a predetermined level. The radio-frequency inductively-coupled plasma generated by the radio-frequency antennae 16 promotes the supply of electrons into the aforementioned magnetic field, so that the sputtering process can be performed at a high rate.

Description

technical field [0001] The present invention relates to a sputtering thin film forming device which uses plasma to sputter a target and forms a predetermined thin film on the surface of a substrate. Background technique [0002] In the past, a parallel-plate sputtering thin-film forming apparatus in which a metal sputtering target (cathode) is arranged to face a substrate in a vacuum vessel has been widely used. In this device, by introducing an inert gas such as argon into the vacuum container, and then applying a DC voltage or a high-frequency voltage to the sputtering target, the plasma is generated in the vacuum container, and sputtering is performed by the ions in the plasma. target to form the desired thin film on the surface of the substrate. [0003] Moreover, a magnetron sputtering apparatus is mentioned as an example of the sputtering thin-film formation apparatus which can form a film at high speed (refer non-patent document 1). In the magnetron sputtering devic...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/40H05H1/46
CPCH01J37/3408C23C14/3407C23C14/358H01J37/321H01J37/3211H01J37/3411H01J37/3417
Inventor 节原裕一江部明宪韩铨建
Owner ELECTRO-MOTIVE DIESEL