Phase-change storage material and manufacture method thereof

Abstract

The invention provides a phase-change storage material and a manufacture method thereof. The manufacture method comprises the steps of: providing a semiconductor substrate, and forming an amorphous Si-SbxTe1-x material layer on the semiconductor substrate, wherein x is greater than or identical to 0.1 but less than or identical to 0.9; forming a SiNy layer rich in H on the amorphous Si-SbxTe1-x material layer, wherein y is greater than or identical to 1 but less than or identical to 1.5; performing fast annealing for the Si-SbxTe1-x material layer and the SiNy layer, so that the amorphous Si in the two layers is transformed to be microcrystal Si to from a microcrystal Si-SbxTe1-x composite phase-change material. Compared with the prior art, the method of the invention provides the microcrystal Si-SbxTe1-x composite phase-change material, wherein the crystallite dimension of the microcrystal Si is between 3nm and 20nm, so that the defects of the microcrystal Si are less than the defects of amorphous Si, oxidation can be inhibited effectively, the mutual diffusion of Si and SbxTe1-x is hindered, and more stable characteristics are provided.

Description

technical field [0001] The present invention relates to a phase-change memory technology, in particular, to a phase-change memory material applied to a phase-change memory and a preparation method thereof. Background technique [0002] As consumers have higher and higher requirements for data storage, traditional data storage devices can no longer meet the growing needs of the market, and new types of memory are emerging, such as phase change memory, ferroelectric memory, RRAM (resistive random access memory) Wait. Phase-change memory (PC-RAM) is a non-volatile semiconductor memory that has emerged in recent years. It is based on Ovshinsky's research in the late 1960s (Phys. Rev. Lett., 21, 1450-1453, 1968) and early 1970s ( Appl. Phys. Lett., 18, 254-257, 1971) put forward the idea that the phase-change film can be applied to the phase-change storage medium, and it is a storage device with low price and stable performance. Phase-change memory can be made on a silicon wafe...

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Problems solved by technology

[0006] The object of the present invention is to provide a kind of microcrystalline Si-Sb x Te 1-x Composite phase change material and preparation method thereof, used to solve Si-Sb in the prior art x Te 1-x In the case of a series of phase-change materials that are composite phases of amorphous Si and SbTe crystals, the phase-change materials are unstable, which makes the phase-change memory perform poorly in terms of performance stability and erasable times.

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