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Doherty power amplifier and power amplifying method

A technology of main power amplifier and signal power, which is applied to parts of amplifiers, amplifiers, amplifiers with semiconductor devices/discharge tubes, etc. It can solve the problems of not meeting the requirements of green environmental protection and limited performance improvement space, and achieve excellent performance. , The effect of ensuring convenience

Inactive Publication Date: 2011-08-17
ZTE CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the mainstream LDMOS device in the industry has been developed to the eighth generation, and its cost is low, but the room for performance improvement is very limited, and it cannot meet the requirements of environmental protection.

Method used

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  • Doherty power amplifier and power amplifying method
  • Doherty power amplifier and power amplifying method
  • Doherty power amplifier and power amplifying method

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Embodiment Construction

[0031] The Doherty power amplifier device in the present invention includes a peak power amplifier device and a main power amplifier device.

[0032] The peak power amplifier is used to amplify signal power by using a High Electron Mobility Transistor (HEMT for short) device.

[0033] HEMT devices are gallium nitride (GaN) based devices.

[0034] Wherein, the main power amplifier device is used to amplify signal power by using a High Voltage Heterojunction Bipolar Transistor (HVHBT for short) device.

[0035] HVHBT devices are gallium arsenide (GaAs) based devices.

[0036] The corresponding power amplification method includes: using a HEMT device to amplify signal power in the Doherty power amplifier device.

[0037] Specifically, the method is: using the HVHBT device to amplify the signal power of the main power amplifier device.

[0038] HEMT devices are gallium nitride (GaN) based devices. HVHBT devices are gallium arsenide (GaAs) based devices.

[0039] The HEMT devi...

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Abstract

The invention discloses a Doherty power amplifier and a power amplifying method. The Doherty power amplifier comprises a peak power amplifier, wherein the peak power amplifier is used for amplifying signal power by a high electron mobility transistor (HEMT). In comparison with traditional Doherty power amplifier of which the main power amplifier and the auxiliary power amplifier both adopt LDMOS (Lateral Diffusion Metal Oxide Semiconductors), by use of the invention, the power amplifying efficiency of the entire Doherty power amplifier is increased substantially.

Description

technical field [0001] The invention relates to the technical field of radio frequency power amplifier design, in particular to a Doherty power amplifier device and a power amplification method. Background technique [0002] In the face of increasingly fierce market competition, the efficiency of base station products has become an important reference point for industry competition. The efficiency improvement of power amplifier devices, which is the main component that determines efficiency, has also become the core point in base stations. The industry has invested manpower and material resources to improve efficiency. Research on improving technology, currently the most widely used technology includes Doherty technology, power amplifier manufacturers have begun mass production and application of Doherty power amplifiers, how to further improve the efficiency of this technology is also particularly important. [0003] Doherty technology was originally applied to traveling wa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/07
CPCH03F3/68H03F3/211H03F2200/405H03F3/604H03F3/602H03F1/0288
Inventor 段斌崔晓俊陈化璋刘建利
Owner ZTE CORP