Light emitting diode chip and fabrication method thereof
A technology of light-emitting diodes and chips, which is applied to electrical components, circuits, semiconductor devices, etc., can solve the problems of limited luminous efficiency and the difficulty of uniform distribution of current, and achieve the effect of uniform distribution and good luminous efficiency.
Inactive Publication Date: 2013-04-24
SHENZHEN ZOQE TECH CO LTD
View PDF3 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Generally, the luminous efficiency of an LED is closely related to the uniformity of current distribution on the surface of the LED. However, when the current LED is energized, the current is difficult to meet the requirement of uniform distribution, and accordingly, its luminous efficiency is also greatly limited.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0032] The present invention will be further described in detail with specific examples below.
[0033] See figure 1 , The first embodiment of the present invention provides a light emitting diode chip 100 , which includes a thermally conductive substrate 11 , a semiconductor layer 12 , a thin ohmic contact layer 13 , a transparent electrode layer 14 , and an electrode contact pad 15 . The semiconductor layer 12 , the ohmic contact layer 13 , the transparent electrode layer 14 , and the electrode contact pad 15 are sequentially stacked on the thermally conductive substrate 11 along the side away from the thermally conductive substrate 11 . In this embodiment, the LED chip 100 is roughly in the shape of a disc.
[0034] The thermally conductive substrate 11 is made of materials with high thermal conductivity, such as copper, aluminum, nickel, silver, gold and other metals or their alloys. In this embodiment, the thermally conductive substrate 11 is made of metal nickel. The ...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention relates to a light emitting diode chip with high luminous efficiency. The light emitting diode chip comprises a heat conducting substrate, a semiconductor layer, a transparent electrode layer, an ohmic contact layer and an electrode contact pad, wherein the semiconductor layer, the transparent electrode layer, the ohmic contact layer and an electrode contact pad are sequentially stacked on one side of the heat conducting substrate, far away from the heat conducting substrate. The semiconductor layer comprises a p-type semiconductor layer, an active layer, and an n-type semiconductor layer which are sequentially stacked on the heat conducting substrate. A step surface is arranged on one side of the n-type semiconductor layer, which is away from the heat conducting substrate, and the thickness of the n-type semiconductor layer in the direction away from the central area of the n-type semiconductor layer is in a step distribution and gradually decreased. The transparent electrode layer is disposed on the step surface. The ohmic contact layer is arranged between the transparent electrode layer and the n-type semiconductor layer. The electrode contact pad is opposite to the central area of the n-type semiconductor layer and is arranged on the transparent electrode layer. Additionally, the invention also relates to a method for fabricating the light emitting diode.
Description
technical field [0001] The invention relates to a light-emitting diode chip, in particular to a light-emitting diode chip with better luminous efficiency, and a method for manufacturing the light-emitting diode chip. Background technique [0002] A light emitting diode (Light Emitting Diode, LED) is a semiconductor element that can convert electric current into light in a specific wavelength range. Light-emitting diodes are widely used in various lighting fields due to their advantages of high brightness, low operating voltage, low power consumption, easy matching with integrated circuits, simple driving, and long life. [0003] LEDs generally include a p-type semiconductor layer, an active layer and an n-type semiconductor layer. When a voltage is applied across the LED, holes and electrons will recombine in the active layer, emitting photons. At present, one of the problems faced by the industry in the application process of LEDs is how to improve the luminous efficiency...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/14
Inventor 赖志成
Owner SHENZHEN ZOQE TECH CO LTD