Check patentability & draft patents in minutes with Patsnap Eureka AI!

Electrostatic discharge protective device

A technology for electrostatic discharge protection and power line, which is applied in circuits, electrical components, semiconductor devices, etc. to avoid leakage current

Active Publication Date: 2012-12-26
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

although Figure 3A The structure can increase the holding voltage and reduce the trigger voltage, but the Figure 3A The structure will have a soft-leakage phenomenon in the electrostatic discharge test

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electrostatic discharge protective device
  • Electrostatic discharge protective device
  • Electrostatic discharge protective device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] In order to make the features and advantages of the present invention more comprehensible, preferred embodiments are listed below, together with the accompanying drawings, as follows:

[0031] Figure 4A It is a possible embodiment of the electrostatic discharge protection device of the present invention. The electrostatic discharge protection device 400 is an insulated gate bipolar transistor (insulated gate bipolar transistor; IGBT), which is composed of a P-type doped region 431, an N-type doped region 421, a P-type doped region 432 and an N-type doped region. District 422 constitutes.

[0032] When an electrostatic discharge event occurs on the power line 451, and the level of the power line 452 is relative to the ground level, the electrostatic discharge current can pass through the P-type doped region 431, the N-type doped region 421, the P-type doped region 432 and the The N-type doped region 422 is released to the ground.

[0033] As shown in the figure, the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an electrostatic discharge protective device, comprising a P-type well region, a first N-type doped region, a first P-type doped region, a second P-type doped region and a second N-type doped region. The first N-type doped region is formed in the P-type well region. The first P-type doped region is formed in the first N-type doped region. The second P-type doped region is provided with a first part and a second part. The first part of the second P-type doped region is formed in the first N-type doped region. The second part of the second P-type doped region is formed on the external side of the first N-type doped region. The second N-type doped region is formed in the first part. The first P-type doped region, the first N-type doped region, the second P-type doped region and the second N-type doped region form an insulated gate bipolar transistor. According to the electrostatic discharge protective device disclosed by the embodiment of the invention, the phenomenon of current leakage can be reduced or avoided.

Description

technical field [0001] The present invention relates to a protection device, in particular to an electrostatic discharge (Electrostatic Discharge; ESD) protection device applied to high operating voltage. Background technique [0002] Component damage caused by Electrostatic Discharge has become one of the most important reliability issues for integrated circuit products. Especially as the size continues to shrink down to the sub-micron level, the gate oxide layer of metal oxide semiconductors is getting thinner and thinner, and integrated circuits are more likely to be damaged by electrostatic discharge phenomena. In order to prevent the ESD from damaging the integrated circuit, a common solution is to install an ESD protection device in the integrated circuit. [0003] Different ESD protection devices have different holding voltage (holding voltage; Vh) and trigger voltage (trigger voltage; Vt1). Generally speaking, the holding voltage (Vh) is better than the operating v...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/739H01L29/06
Inventor 周业宁洪嘉伟张淑铃邱华琦黄晔仁
Owner VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com