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Semiconductor laser structure capable of realizing high-power transverse low divergence angle

A low divergence angle, semiconductor technology, applied in the direction of semiconductor lasers, lasers, laser components, etc., can solve the problems of large lateral divergence angle and limited maximum output power, and achieve maximum output power improvement, low loss, and high luminous efficiency Effect

Active Publication Date: 2012-09-26
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The main purpose of this method is to provide a semiconductor laser structure that realizes high-power lateral and low divergence angles, and solves the problems of large lateral divergence angles and limited maximum output power in semiconductor lasers

Method used

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  • Semiconductor laser structure capable of realizing high-power transverse low divergence angle
  • Semiconductor laser structure capable of realizing high-power transverse low divergence angle
  • Semiconductor laser structure capable of realizing high-power transverse low divergence angle

Examples

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Embodiment

[0036] This example uses figure 1 The structure shown shows the change of the transverse mode of the laser under the modulation of the photonic crystal. The substrate of the structure is P-type doped GaAs material, and the material and thickness of each layer of the structure from bottom to top are as follows:

[0037] The material and thickness of the upper loss modulation layer 112 and the lower loss modulation layer 113 are respectively Al 0.2 Ga 0.8 As, 0.2 μm; the material and thickness of the lower mode confinement layer 114 and an upper mode confinement layer 115 are respectively Al 0.2 Ga 0.8 As, 0.16 μm; the number of mode extension layers 116 is 5 layers, and the material and thickness are respectively Al 0.2 GaAs, 0.18 μm; the material and thickness of the peak limiting layer 118 are Al 0.1 Ga 0.9 As, 0.1 μm; the material and thickness of the low refractive index layer 111 are respectively Al 0.35 Ga 0.65 As, 0.5 μm; the material and thickness of the transit...

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Abstract

The invention discloses a semiconductor laser structure capable of realizing a high-power transverse low divergence angle. The semiconductor laser structure comprises a gallium arsenide substrate, a photonic crystal area, a transition layer, an upper limiting layer and a contact layer, wherein the photonic crystal area is arranged on the gallium arsenide substrate and used for realizing the large-area oscillation of a base mold; the transition layer is arranged on the photonic crystal area; the upper limiting layer is arranged on the transition layer and used for limiting the upward leakage of an optical field; and the contact layer is arranged on the upper limiting layer and used for forming an upper electrode with metal, so that the semiconductor laser structure capable of realizing thehigh-power transverse low divergence angle is formed.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic devices, in particular to a semiconductor laser structure for realizing high-power lateral low divergence angle. Background technique [0002] Semiconductor lasers have a history of nearly 50 years of development. During this period, great progress has been made in semiconductor material epitaxy technology, laser packaging technology, refrigeration technology and beam coupling shaping technology. Whether abroad or at home, they have conducted detailed research on semiconductor epitaxy materials, laser structure design, laser process manufacturing, device packaging, etc., and have developed a complete and mature production process. The research and application of high-power semiconductor lasers with high power, long life and high beam quality are also gradually mature. In recent years, the research and application of high-power semiconductor lasers at home and abroad show a tr...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/042H01S5/323
Inventor 郑婉华陈微张建心渠红伟付非亚
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI