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NV (nonvolatile) storing device

A storage device and storage unit technology, applied in information storage, static storage, digital storage information, etc., can solve problems such as increased bit cost

Active Publication Date: 2012-12-12
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, some projections show that the cost of bits using this approach will increase in the future, as at some point the process cost will increase faster than the memory cell shrink rate

Method used

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  • NV (nonvolatile) storing device

Examples

Experimental program
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Embodiment Construction

[0151] figure 1 It is a block diagram of a storage device 100 according to an embodiment of the present invention. The memory device 100 may include a memory array 102 , a column decoder 104 , a sense amplifier 106 , a row decoder 108 , and a source switch 110 . Memory array 102 may include a plurality of memory cells 112 .

[0152] The memory device 100 can be configured such that the memory cells 112 are arranged like a NOR with word lines WL0-WL4, bit lines BL0-BL5, and source lines SL arranged in rows and columns. Flash architecture. Bit lines BL0 - BL5 of memory array 102 may be connected to sense amplifier 106 . Word lines WL0 - WL4 may be connected to column decoder 108 . The source line SL may be connected to the source switch 110 . Address signals and control signals can be delivered on the address / control lines to input the address signals and control signals into the memory device 100, and connected to the row decoder 104, the sense amplifier 106, the column de...

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PUM

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Abstract

The invention provides an NV (nonvolatile) storing device, comprising a memory cell array; each memory cell can store multi-bit data and comprises a programmable transistor which is connected with a resistance switching device; a threshold voltage of each transistor can be switched among multiple different threshold voltages associated with each storage state; and the resistance switching device can be switched among multiple different resistances associated with each storage state.

Description

technical field [0001] The present invention relates to an electronic memory device, and more particularly to a semiconductor memory device suitable as a non-volatile memory device. Background technique [0002] Electronic storage devices are well known and found in a variety of electronic systems. For example, in computers and other computing devices there is electronic storage (sometimes referred to as computer memory). Many removable or self-contained electronic storage devices such as memory cards or solid state data storage systems are well known. For example, a removable memory card can be used in a digital camera to store photos or a digital video recorder can be used to store movies recorded by a digital video recorder. [0003] Most electronic storage devices can be classified as either volatile or non-volatile. In general, volatile electronic storage devices require power to maintain stored information. Examples of volatile electronic storage devices are Static...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/24H01L27/22H01L27/115G11C11/40
Inventor 陈逸舟简维志李峰旻
Owner MACRONIX INT CO LTD
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