Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A method for fabricating two-way memory devices using double-constraint annealing

A device, two-way technology, applied in the field of two-way memory device manufacturing by annealing nickel-titanium-based alloys with solid solution and aging double constraints, can solve the problem of sensitivity to training temperature, setting temperature and training times, poor pre-design of double memory stroke, Two-way memory performance and stability are poor, achieving the effects of strong industrial practicability, low cost, and large strain.

Inactive Publication Date: 2011-12-07
西安赛特金属材料开发有限公司
View PDF1 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, there are very few studies on the direct production of two-way memory devices, and most of them are in the research and development stage. However, some production methods such as thermomechanical training methods have been proposed. The production process is very complicated and is very sensitive to training temperature, setting temperature and training times. Moreover, the stability of the obtained two-way memory performance is poor, the reproducibility of the training process is poor, the pre-designability of the double memory trip is poor, and it is difficult to be practical, thus limiting the application of the two-way memory device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method for fabricating two-way memory devices using double-constraint annealing
  • A method for fabricating two-way memory devices using double-constraint annealing
  • A method for fabricating two-way memory devices using double-constraint annealing

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] A binary nickel-titanium memory alloy whose composition is Ni: 56wt.%, Ti: 44wt.% is selected, and the raw material is a wire with a diameter of Φ0.8mm. Wind the wire on a Φ8mm helical spring mold according to the pre-strain, the pre-strain is ε=10%, the spring parameters are: pitch d=0mm, number of turns n=10, spring length L1=8.5mm, the wire The shape of the material is fixed, placed in a constant temperature furnace at 650°C for 0.5h, and then water-cooled. The obtained spring was stretched and constrained again to a length of L2=22.5 mm, then fixed, placed in a constant temperature furnace at 500° C. for 2 hours, and cooled in air. Take out the prepared spring device, the schematic diagram of the action of the two-way memory spring is as follows figure 2 As shown, the two-way stroke is: the spring stretches when the temperature rises, and the spring contracts when the temperature cools down.

[0026] Place the spring in a displacement-temperature tester to measur...

Embodiment 2

[0029] A ternary nickel-titanium memory alloy whose composition is Ni: 55.7wt.%, Ti: 44wt.%, Cr: 0.3wt.%, is selected, and the raw material is a wire with a diameter of Φ1.0mm. The wire is wound on a Φ12mm helical spring mold according to the pre-strain, the pre-strain is ε=8.3%, and the spring parameters are: pitch d=2.0mm, number of turns n=6, spring length L 1 = 20mm, fix the shape of the wire, put it in a constant temperature furnace at 700°C for 45min, and then cool it in water. Constrain the obtained spring again to compression to L 2 = 10mm in length, fixed, put into a constant temperature furnace at 450°C for 1 hour, and air-cooled. Take out the prepared spring device, the schematic diagram of the action of the two-way memory spring is as follows figure 2 As shown, the two-way stroke is: the spring contracts when the temperature rises, and the spring elongates when the temperature cools down.

[0030] After testing, the starting temperature of spring heating is 3°C...

Embodiment 3

[0032] A ternary nickel-titanium memory alloy whose composition is Ni: 55.4wt.%, Ti: 44wt.%, V: 0.6wt.% is selected, and the raw material is a wire with a diameter of 1mm. Wind the wire on the flat mold of the special-shaped tower spring according to the pre-strain, the pre-strain range is ε=5-20%, fix the special-shaped tower spring, put it in a constant temperature furnace at 720°C for 0.5h, air cooled. The obtained special-shaped tower spring is vertically stretched and fixed on the mold again, with a height of 35mm, and then placed in a constant temperature furnace at 500°C for 2 hours and cooled in the furnace. The spring phase transition temperature Af=43°C was measured by bending test. Put the special-shaped tower-shaped spring device into hot water above 60°C, and the measured spring height is 35mm, and then put the spring into -10°C alcohol, and the measured spring height is 3mm. After 1000 cycles of cold and heat cycles, the high-temperature shape memory stability ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Diameteraaaaaaaaaa
Pitchaaaaaaaaaa
Phase transition temperatureaaaaaaaaaa
Login to View More

Abstract

The double-constraint annealing method for manufacturing a two-way memory device disclosed by the invention is made by using binary or multi-component nickel-titanium-based shape memory alloys. Two-way memory devices are obtained through the following annealing process: the constrained strain ranges from 1% to 50%, the annealing sequence is solid solution first and then aging, and the solid solution temperature for shaping the low-temperature shape is 600°C to 850°C, and the time is 15min to After 60 minutes, the obtained device is subjected to secondary constrained aging treatment according to its high-temperature shape, the aging temperature is 350°C-50°C, and the aging time is 0.5h-6h, and the device of the present invention is obtained. The device can obtain the two-way memory function without any mechanical training. The two-way memory has high stability, strong anti-fatigue performance, and can be used thousands of times. Two-way memory devices can use raw materials such as wire, rod and plate to make tension (compression) springs, disc springs, torsion springs, special-shaped springs, rings and other forms. The production method of the invention has the advantages of simple and convenient production, low cost, high efficiency, strong shape design and practicability, and the like.

Description

technical field [0001] The invention relates to a method for manufacturing a two-way memory device by double-constraint annealing, which belongs to the technical application field of shape memory alloys, and particularly relates to a method for manufacturing a two-way memory device by annealing a nickel-titanium-based alloy through solid solution aging and double-constraint annealing . Background technique [0002] Nickel-titanium-based shape memory alloy has a unique shape memory effect and superelasticity, excellent wear resistance, corrosion resistance and damping properties, and good mechanical properties. It has a wide range of applications, involving machinery, electronics, chemical industry, energy, construction, and medical treatment. and aerospace fields. As a functional material, shape memory alloys have one-way, two-way and full-range memory effects, among which the two-way memory effect is more eye-catching. In many fields, the two-way action can only be comple...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C22F1/10C22C19/05
Inventor 王建淦曹继敏牛中杰田成民雷亚军杨宏进毛江虹
Owner 西安赛特金属材料开发有限公司
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More