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Plasma processing device and dielectric window structure thereof

A plasma and processing device technology, applied in the field of plasma processing device and its dielectric window structure, can solve the problems of high permittivity of alumina, low productivity, easy consumption, etc., and achieve the effect of realizing productivity

Inactive Publication Date: 2014-03-19
TOKYO ELECTRON LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] However, alumina has a large permittivity
Therefore, at the portion where the beam supporting the dielectric window member is directly covered by the dielectric protection cover, the beam is capacitively coupled with the plasma, and new plasma is generated in the processing space adjacent to this portion, while the dielectric protection cover of the portion directly below the beam Easily consumed by the plasma being cut
Therefore, there is a problem that the replacement frequency of the dielectric protective cover becomes high, resulting in a decrease in productivity.

Method used

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  • Plasma processing device and dielectric window structure thereof
  • Plasma processing device and dielectric window structure thereof
  • Plasma processing device and dielectric window structure thereof

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Embodiment Construction

[0023] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

[0024] figure 1 It is a longitudinal sectional view schematically showing a schematic configuration of a plasma etching apparatus as a plasma processing apparatus according to an embodiment of the present invention. This plasma etching apparatus is used, for example, to pattern a polysilicon film or an amorphous silicon film in the process of forming a TFT (Thin Film Transistor) on an LCD glass substrate in the manufacture of an LCD.

[0025] This plasma etching apparatus includes a rectangular container-shaped processing chamber 1 made of a conductive material such as alumina whose surface is anodized. The processing chamber 1 is grounded through the ground line 1a. The inside of the processing chamber 1 is airtightly partitioned into an upper antenna chamber 4 and a lower processing chamber (processing space) 5 by a dielectric window structure 2 . Such as...

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Abstract

The invention aims to provide a plasma processing device and a dielectric window structure, which can restrain consumption due to local reduction of a dielectric protective cover equipped on the inner side of a dielectric window and achieve productivity increase by prolonging the service lifetime of the dielectric protective cover. The plasma processing device can generate inductance coupling plasma in a processing space when high-frequency electric power is applied on a high-frequency antenna on the outer side of the dielectric window. The dielectric window comprises a window part configured in a way to be clamped between the processing space and the high-frequency antenna and composed of dielectric; beam parts for supporting the window part; a dielectric protective cover applied for covering a face on the processing space side of the window part and a face on the processing space on the beam part so as to protect corrosion from the plasma; and a low-capacitivity dielectric layer at least equipped between the beam part and the dielectric protective cover and formed by materials with a capacitivity lower than that of the protective cover.

Description

technical field [0001] The invention relates to a plasma processing device and its dielectric window structure. Background technique [0002] Conventionally, in the fields of manufacture of liquid crystal display devices (LCD) and semiconductor devices, etc., it is known to use inductively coupled plasma ( ICP) plasma processing device. [0003] In a plasma processing apparatus using inductively coupled plasma, a dielectric window is arranged in a part of a metal processing chamber, and a high-frequency power (RF) is applied to a high-frequency antenna provided outside the dielectric window, and the processing An inductively coupled plasma is generated in the chamber. The window member (dielectric material) constituting the dielectric window is often made of quartz. [0004] In a plasma processing apparatus using inductively coupled plasma, there is a case in which, for example, a cross-shaped beam is arranged in a dielectric window portion and four divided window members...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/32
CPCH01J37/3211H01J37/32119H01J37/32559H05H1/46H05H1/4652
Inventor 佐佐木和男南雅人齐藤均
Owner TOKYO ELECTRON LTD