Method for raising light emitting diode luminescence efficiency
A technology for light-emitting diodes and luminous efficiency, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as low efficiency, and achieve the effects of reducing operating voltage, improving leakage, and improving ESD yield
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Embodiment 1
[0042] Such as Figure 1 Shown:
[0043] (1) Substrate 1
[0044] First, anneal the sapphire substrate at a temperature of 1120°C in a pure hydrogen atmosphere, and then perform nitriding treatment;
[0045] (2) Low temperature buffer layer 2
[0046] Lower the temperature to 585°C to grow a 20nm-thick low-temperature GaN nucleation layer. During this growth process, the growth pressure is 420 Torr, and the V / III molar ratio is 900;
[0047] (3) High temperature buffer layer 3
[0048]After the growth of the low-temperature buffer layer 2 is completed, stop feeding TMGa, raise the substrate temperature by 1120° C., and perform annealing treatment on the low-temperature buffer layer 2 in situ. The annealing time is 8 minutes; after the annealing, adjust the temperature to 1120° C. Epitaxial growth of high-temperature undoped GaN with a thickness of 1.2 μm under a lower V / III molar ratio. During this growth process, the growth pressure is 200 Torr, and the V / III molar ratio ...
Embodiment 2
[0072] In Example 2, the growth methods of the epitaxial layers 1, 2, 3, 4, 5, 6, 7, 9, 10, and 11 are the same as those in Example 1. The difference lies in the growth method of the barrier layer in the light-emitting layer MQW: such as image 3 As shown, the thicknesses of the first three barrier layers 302 near the N-type layer are the same between 12 and 24 nm, the thicknesses of the middle three barrier layers 303 are the same between 16 and 30 nm, and the thicknesses of the last three barrier layers near the P-type layer are the same. The thickness of 302 is also between 12 and 24 nm. Among them, the middle three barrier layers 302 have the thickest thickness.
Embodiment 3
[0074] In Example 3, the growth methods of the epitaxial layers 1, 2, 3, 4, 5, 6, 7, 9, 10, and 11 are the same as those in Example 1. The difference lies in the growth method of the barrier layer in the light-emitting layer MQW: such as Figure 4 As shown, the thicknesses of the first three barrier layers 402 near the N-type layer are the same between 16 and 30 nm, and the thicknesses of the last six barrier layers 403 near the P-type layer are also between 12 and 24 nm. Among them, the thickness of the first three barrier layers on the side close to the N-type layer is the thickest.
[0075] After the chip manufacturing process and testing under the same conditions, the optical output power of a 10×8mil single small chip is 6.3mW, the working voltage is 3.15V, and it can be antistatic: the human body model is 5000V.
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