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Light trapping structure for monocrystalline silicon solar cell

A light-trapping structure and solar cell technology, applied in the field of light-trapping structures, can solve the problems of increasing interfacial recombination loss and reducing battery efficiency, achieving good battery performance, improving light absorption efficiency, and increasing optical absorption efficiency

Active Publication Date: 2012-08-01
CHANGZHOU SHICHUANG ENERGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

From the perspective of carrier transport, if the metal nanoparticles are placed directly near the junction region, the recombination center of photogenerated carriers will be provided while the light absorption is increased, and the interfacial recombination loss will be greatly increased, which will reduce the efficiency of the battery.

Method used

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  • Light trapping structure for monocrystalline silicon solar cell
  • Light trapping structure for monocrystalline silicon solar cell
  • Light trapping structure for monocrystalline silicon solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] as attached figure 2 A light-trapping structure for a monocrystalline silicon solar cell shown, the light-trapping structure comprising: a textured p-type crystalline silicon substrate (5), on the p-type crystalline silicon substrate (5) n-type diffused doped layer (4), forming a pn junction; SiH 4 gas at a flow rate of 3.5 sccm and NH 3 Gas enters the PECVD deposition chamber at a flow rate of 50 sccm and hydrogen gas at a flow rate of 82 sccm, and a layer of Si with a thickness of less than 20 nanometers is deposited by PECVD on the n-type diffusion doped layer. 3 N 4 Passivation layer (3), its mass density is 2.3g / cm 3 , the refractive index is 2.3, and the hydrogen concentration is 20 atomic %. A thickness-controllable resin layer (1) containing metal nanoparticles (2) is coated on the passivation layer (3). Adjust the refractive index of the resin layer between air and Si 3 N 4 Between the passivation layer (3), the reflection loss can be further reduced. ...

Embodiment 2

[0026] Such as image 3 A light-trapping structure for a monocrystalline silicon solar cell is shown, the light-trapping structure includes: a p-type crystalline silicon substrate (5), and an n-type diffusion on the p-type crystalline silicon substrate (5) doped layer (4), forming a pn junction; depositing a layer of Si with a thickness less than 20 nanometers by PECVD on the p-type diffused doped layer 3 N 4 A passivation layer (3), depositing a monomolecular layer on the passivation layer (3) by means of heat conduction fumigation to improve adhesion. The surface-modified metal nanoparticles (2) are deposited directly onto the monolayer by a spray bake method. The preparation of the passivation layer is the same as in Example 1.

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Abstract

The invention relates to a light trapping structure for a monocrystalline silicon solar cell by using the surface plasmon effect of metal nano particles and a texture scattering double absorption reinforcing mechanism. The light trapping structure is characterized by comprising a textured crystal silicon substrate (5), a doped layer (4) on the crystal silicon substrate (5), a nano passivation layer (3) on the doped layer (4), a nano resin layer (1) on the passivation layer (3) and metal nano particles (2) in the nano resin layer (1). By using the light trapping structure, the monocrystalline silicon solar cell can reach the excellent light trapping effect, and additional interfaces are not required to be introduced so as to avoid the increment of interface defects and carrier recombination centers; and meanwhile, the efficiency of the crystal silicon solar cell can be ensured in optical and electrical aspects.

Description

technical field [0001] The invention relates to a light-trapping structure for monocrystalline silicon solar cells, and is especially designed to trap light using the surface plasmon effect of metal nanoparticles and the dual absorption enhancement mechanism of textured surface scattering for monocrystalline silicon solar cells. light-trapping structure. Background technique [0002] At present, in the production process of traditional monocrystalline silicon solar cells, doped pn junctions are produced on crystalline silicon substrates by means of diffusion. In order to improve the performance and efficiency of solar cells, it is necessary to absorb as much sunlight as possible. Therefore, before the diffusion process, a textured surface will be made on the crystalline silicon substrate, which is usually formed by etching the surface of the silicon wafer with an alkaline etching solution (such as KOH, NaOH, etc.). [0003] However, even if the light absorption efficiency ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0216H01L31/04H01L31/0236
CPCY02E10/50
Inventor 符黎明陈培良章圆圆徐勇
Owner CHANGZHOU SHICHUANG ENERGY CO LTD