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Method for producing a piezoresistive sensor device and sensor device

A sensor device and inertial sensor technology, applied in the field of inertial sensors to achieve the effect of simple implementation

Active Publication Date: 2015-12-16
ROBERT BOSCH GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Here, however, sensor devices with a mass element, a base part and an arm connecting the mass element and base part are mostly produced on the basis of SOI technology (SOI: silicon-on-insulator technology) and cannot be integrated into the electronics of such sensors. Circuit (IC) manufacturing process

Method used

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  • Method for producing a piezoresistive sensor device and sensor device
  • Method for producing a piezoresistive sensor device and sensor device
  • Method for producing a piezoresistive sensor device and sensor device

Examples

Experimental program
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Embodiment Construction

[0028] Figures 1 to 3 The step-by-step construction of a piezoresistive sensor device 10 for an inertial sensor is shown in plan view in each case. exist image 3 The completed sensor device 10 has a mass element 12 , a base part 14 and a piezoresistive arm 16 connecting the mass element 12 and the base part 14 . Figures 4 to 6 shown in image 3 A cross-sectional view of the fabricated device 10 in three different sections of the device 10 is shown in .

[0029] figure 1 Shown is a provided preform (semi-finished product) 18 of a sensor device 10 with a semiconductor substrate 20 having a doped region 22 and an undoped region 24 at least partially surrounding this doped region 22 or with Another doped region, wherein the otherwise doped region has another doping pattern than the doped region. The semiconductor substrate 20 is preferably formed as a silicon substrate. The electrically insulating layer 26 covering the surface of the semiconductor substrate 20 is not in ...

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Abstract

The method involves providing a precursor (18) with an electrical insulating layer e.g. dielectric sheet, of a semiconductor substrate (20) i.e. silicon substrate. Two openings are formed on the insulating layer. The openings are arranged in portions of an endowed region (22). Regions (28, 30) of the precursor are separated from a remaining arm. A bar of the arm is formed of an endowed material between the portions in the endowed region of a strip guard. Remaining strips of the layer are formed between the strip guard and the bar. An independent claim is also included for a piezoresistive sensor arrangement for an inertial sensor, comprising a base part.

Description

technical field [0001] The invention relates to a method for producing a piezoresistive sensor device for an inertial sensor, the sensor device having a mass element, a base part and piezoresistive arms connecting the mass element to the base part. The invention also relates to a corresponding piezoresistive sensor arrangement and a corresponding inertial sensor. Background technique [0002] A piezoresistive sensor arrangement—a so-called beam structure—is disclosed for inertial sensors, such as piezoresistive acceleration sensors. The beam structure has a mass element (the so-called “vibration-sensitive mass”), a base part and piezoresistive arms (beams) connecting the mass element and the base part. [0003] Known types of piezoresistive acceleration sensors with sensor devices of this type are common, the corresponding mass element being structurally doped and Mechanical stresses are induced in the arms, which are designed as so-called beams. The mechanical stresses t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00B81B3/00G01P15/09G01L1/18
CPCG01P15/0802G01P15/123G01P2015/0828
Inventor A.法伊
Owner ROBERT BOSCH GMBH
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