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SiC crystal growth furnace temperature measuring window

A technology of crystal growth furnace and furnace body, which is applied in the field of temperature measurement window, can solve the problems that the observation window is easily covered and affects the accuracy of temperature measurement, and achieves the effect of simple structure, low cost and solving the problem of shading

Active Publication Date: 2013-10-30
SHANXI SEMICORE CRYSTAL CO LTD
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Problems solved by technology

[0003] The invention provides a temperature measurement window of a SiC crystal growth furnace, which solves the problem that the observation window of the existing SiC crystal growth furnace is easily covered, thereby affecting the accuracy of temperature measurement.

Method used

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  • SiC crystal growth furnace temperature measuring window

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Embodiment Construction

[0010] The present invention is described below in conjunction with accompanying drawing:

[0011] A SiC crystal growth furnace temperature measurement window, comprising a furnace body 1, a flange 3 fixedly connected to the base 2 of the furnace body 1, a temperature measurement window hole communicating with the interior of the furnace body 1 is arranged in the center of the flange 3, The interlayer connecting pipe 4 is fixedly connected to the temperature measuring window hole, the outer pipe wall of the interlayer connecting pipe 4 is connected with the air inlet pipe 5, and the inner pipe wall 6 of the interlayer connecting pipe 4 is connected with the The walls are spaced apart and parallel to the horizontal plane to be provided with a circle of small air intake holes 12. The lower end of the interlayer connection pipe 4 is fixedly connected with the observation window glass 8. The inner wall of the interlayer connection pipe 4 is connected to the outer layer of the inter...

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Abstract

The invention discloses a SiC crystal growth furnace temperature measuring window which solves the problem that the traditional SiC crystal growth furnace observation window is easy to be obscured. The SiC crystal growth furnace temperature measuring window comprises a furnace body (1), a flange (3), a temperature measuring window hole, an interlayer connecting pipe (4), an air inlet pipe (5), a circle of small air inlet holes (12), observation window glass (8) and an infrared temperature measuring head (10), wherein the flange (3) is fixedly connected with a pedestal (2) of the furnace body (1); the temperature measuring window hole communicated with the furnace body (1) is arranged in the center of the flange (3); the interlayer connecting pipe (4) is fixedly connected on the temperature measuring window hole; the air inlet pipe (5) is connected with the outer layer pipe wall of the interlayer connecting pipe (4); the small air inlet holes (12) are arranged on the inner layer pipe wall (6) of the interlayer connecting pipe (4) along the inner layer pipe wall at intervals and in parallel to the horizontal level; the observation window glass (8) is fixedly connected with the lower end of the interlayer connecting pipe (4); and the infrared temperature measuring head (10) is arranged below the observation window glass (8) at the lower end of the interlayer connecting pipe (4). The SiC crystal growth furnace temperature measuring window provided by the invention has the advantages of simple structure and low cost.

Description

technical field [0001] The invention relates to a temperature measuring window of a SiC crystal growth furnace. The device is mainly used in SiC crystal growth equipment, and can effectively improve the temperature measurement accuracy of the SiC crystal growth equipment and improve the quality of crystal materials. Background technique [0002] At present, the operating temperature of SiC crystal growth equipment is generally around 2200°C. At such a high temperature, ordinary contact temperature measurement components cannot be used, and only optical temperature measurement can be relied on. Optical temperature measurement is performed by setting a glass observation window on the device and measuring the temperature through the light emitted from the observation window. In the existing SiC crystal growth furnace, because the insulation material used is very easy to generate dust, it is easy to cover the observation window of the crystal growth furnace, which affects the a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/36C30B35/00G01J5/00
Inventor 李斌王花赵付超周立平王英民高德平毛开礼徐伟田牧张蕾乔卿赵琳
Owner SHANXI SEMICORE CRYSTAL CO LTD