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A kind of preparation method of low stress tantalum nitrogen thin film

A low-stress, tantalum-nitrogen technology, applied in the direction of semiconductor devices, can solve the problems such as the impossibility of preparing thin films, and achieve the effect of promoting channel mobility and reducing negative effects

Active Publication Date: 2016-08-24
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the single metal electrode technology in the Gate-first integration scheme, it is impossible to prepare a film with both compressive stress and tensile stress. In order to reduce the negative impact of compressive stress on nMOS or tensile stress on pMOS, it is necessary to consider using low-stress metals. for gate electrode

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  • A kind of preparation method of low stress tantalum nitrogen thin film
  • A kind of preparation method of low stress tantalum nitrogen thin film

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Embodiment Construction

[0023] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be further described below in conjunction with the accompanying drawings of the specification. Of course, the present invention is not limited to this specific embodiment, and general replacements well known to those skilled in the art are also covered by the protection scope of the present invention.

[0024] Secondly, the present invention uses schematic diagrams to describe in detail. When describing the examples of the present invention, for convenience of explanation, the schematic diagrams are not partially enlarged according to the general scale and should not be used as a limitation to the present invention.

[0025] figure 1 It is a schematic flow diagram of a method for preparing a low-stress tantalum nitrogen film in an embodiment of the present invention. Such as figure 1 As shown, the present invention provides a method for preparing ...

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Abstract

The invention relates to a method for preparing a low-stress tantalum-nitrogen thin film with uniform thickness that can be used as a gate electrode. Combining the low-stress tantalum-nitrogen film-forming process and the physical back-etching process, the plasma of the film-forming process and the back-etching process is ensured. On the premise that the horizontal distribution is consistent or close, the uniformity of the tantalum nitrogen thin film is effectively controlled. A low-stress tantalum nitrogen thin film that can obtain low film stress of less than 600MPa and is suitable for the gate electrode of the gate-first process integration scheme in high-k / metal gate (High-k / Metal Gate) technology.

Description

Technical field [0001] The invention relates to the technical field of integrated circuit technology, in particular to a method for preparing a low-stress tantalum nitrogen film used as a gate electrode. Background technique [0002] Metal-oxide-semiconductor field-effect transistors (MOSFETs) have been used in the ultra-large-scale integrated circuit (ULSIC) manufacturing industry for more than 40 years, and have been following Moore's Law, achieving integration density doubling every 1.5 years. SiO 2 As a key functional material, the dielectric has served the gate oxide layer of CMOS technology for a long time, and gradually thinned in order to keep the device shrinking. However, in recent years, too thin SiO 2 The dielectric layer has encountered insurmountable technical problems, the industry uses SiON instead of SiO 2 Following the traditional technology to the 45nm technology generation, the problem of increased leakage current cannot be avoided-traditional silicon-based di...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/28
Inventor 林宏
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT