Semiconductor device

Abstract

An integrated circuit for implementing a switch-mode power converter is disclosed. The integrated circuit comprises at least a first semiconductor die having an electrically quiet surface, a second semiconductor die for controlling the operation of said first semiconductor die stacked on said first semiconductor die having said electrically quiet surface and a lead frame structure for supporting said first semiconductor die and electrically coupling said first and second semiconductor dies to external circuitry.

Description

technical field [0001] The present invention relates to the field of integrated circuit packaging, more specifically relates to the integrated circuit packaging of chip stacking. Background technique [0002] Disclaimer here, this section only provides the background technology related to the invention, not the prior art. [0003] Switch-mode power converters are widely used in consumer electronics. In many high power consumption applications, switch-mode power converters need to work at high supply voltages or provide high currents. Therefore, in these occasions, the power switch of the switch-mode power converter needs to maintain a high voltage or flow a large current. [0004] Typically, high-voltage vertical field-effect transistors (FETs) and power metal-oxide field-effect transistors (MOSFETs) include multiple parallel-connected switching elements, each switching element has a large number of basic MOSFET transistors, and the transistors are sequentially arranged in...

AI Technical Summary

Problems solved by technology

For such a power converter integrated circuit, the package size of the conventional packaging method is very large

In addition, the conventional method needs to use bonding wire (Bonding Wire) interconnection between different semiconductor chips, so high interconnection resistance, parasitic resistance and parasitic inductance will be introduced into the integrated circuit.

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