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Method for reprocessing TEM sample

A technology for reprocessing and sample reprocessing, applied in the field of reprocessing TEM samples, can solve the problems such as not proposed, reducing the thickness of the TEM sample, and the ion beam cutting time cannot effectively reduce the thickness of the TEM sample.

Active Publication Date: 2012-06-06
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

It can be seen that in the prior art, even if the intensity of the ion beam of the FIB is increased or the cutting time of the FIB is increased, the thickness of the TEM sample cannot be effectively reduced.
[0022] In summary, the prior art has not proposed an effective solution to reduce the thickness of TEM samples

Method used

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  • Method for reprocessing TEM sample
  • Method for reprocessing TEM sample
  • Method for reprocessing TEM sample

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Embodiment Construction

[0042] In order to make the objectives, technical solutions, and advantages of the present invention clearer and more comprehensible, the solutions of the present invention will be described in further detail below with reference to the accompanying drawings and embodiments.

[0043] The core idea of ​​the present invention is to obtain the SEM pictures of the surface of the first amorphous layer and the second amorphous layer of the TEM sample, and then determine the first amorphous layer and the SEM pictures of the second amorphous layer surface. The surface of the amorphous layer or the second amorphous layer is used as the reprocessed surface of the TEM sample. Finally, FIB is used to scan the determined reprocessed surface of the TEM sample. In this way, the first amorphous layer or the second amorphous layer is processed by FIB. Scanning the surface of the crystal layer will not damage the target area in the TEM sample, and effectively reduce the thickness of the TEM sample....

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Abstract

The invention discloses a method for reprocessing a TEM sample, which is comprises the following steps: SEM pictures on the surfaces of a first noncrystal layer and a second noncrystal layer can be respectively acquired, then according to the SEM pictures on the surfaces of the first noncrystal layer and the second noncrystal layer, the surfaces of the first noncrystal layer or the second noncrystal layer can be taken as the reprocessed surfaces of the TEM samples, FIB is employed for scan processing the reprocessed surfaces of the determined TEM samples. The method of the invention can effectively reduce the thickness of the TEM samples.

Description

Technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for reprocessing TEM samples. Background technique [0002] Transmission electron microscope (TEM) is an important tool in electron microscopy. TEM is usually used to examine the morphology, size, and characteristics of the thin films that make up semiconductor devices. After the TEM sample is placed in the TEM observation chamber, the main working principle of the TEM is: when the high-energy electron beam penetrates the TEM sample, the phenomena such as scattering, absorption, interference and diffraction will occur, so that the contrast is formed on the imaging plane, thereby forming the image of the TEM sample , And then observe, measure and analyze the image. [0003] The TEM sample determines the accuracy of the analysis result to a certain extent. Therefore, the preparation of the TEM sample is very important. The following describes the TEM sample preparation...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N1/28
Inventor 段淑卿庞凌华
Owner SEMICON MFG INT (SHANGHAI) CORP