Method for measuring Young modulus of inlaid thin film
A Young's modulus and thin-film technology, which is applied in the field of material physical property detection, can solve the problems of inability to measure the Young's modulus of dielectric materials with inlaid thin-film structures, and the inability to calculate the theoretical dispersion curve of surface waves, etc., and achieve the effect of accurate measurement
Active Publication Date: 2013-07-24
太仓佳诚半导体设备有限公司
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Problems solved by technology
At present, theoretical calculation methods can be used to calculate the theoretical dispersion curve of surface waves in single-layer or multi-layer thin-film structures, but this method cannot calculate the theoretical dispersion curve of surface waves propagating on mosaic thin-film structures, and cannot measure mosaic thin-film structures. Young's Modulus of Structural Dielectric Materials
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[0018] The embodiment of the present invention uses the finite element method to measure the Young's modulus of the dielectric in the interconnection system of the VLSI. Modern interconnection systems generally use Cu and low-k materials. figure 1 Simplified damascene structures of Cu and low-k materials shown.
[0019] The present invention is mainly divided into three steps. The first step is to use finite element simulation software to simulate the propagation characteristics of the surface wave on the inlaid film structure, and to draw the dispersion curve of the surface wave. Since the propagation characteristics of surface waves on the inlaid film structure are simulated, the eigenfrequency analysis in the acoustic wave module is selected for simulation, and a 2-dimensional model is used to reduce the amount of calculation in the simulation process. The specific methods are as follows:
[0020] First, create a simulation model, figure 1 A schematic diagram of the model...
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Abstract
The invention belongs to the technical field of detection of physical characteristics of a material and relates to a method for measuring a Young modulus of an inlaid thin film. The method comprises the following steps of: (1) establishing a simulation model of the inlaid thin film and a silicon substrate; (2) determining parameters of the inlaid thin film and the silicon substrate; (3) determining boundary conditions of the inlaid thin film and the silicon substrate; (4) drawing a theoretical frequency dispersion curve by using a finite element method when a series of inlaid thin film substrates have different Young modulus; (5) measuring an actual frequency dispersion curve of the inlaid thin film of a sample to be detected; and (6) matching the measured actual frequency dispersion curve of the inlaid thin film of the sample to be detected with the theoretical frequency dispersion curve to obtain the Young modulus of the inlaid thin film. With the adoption of the method provided by the invention, the Young modulus of a dielectric medium material can be rapidly and accurately measured without losses, thereby solving the problem that the traditional method cannot measure the Youngmodulus of the dielectric medium material in an inlaid structure thin film.
Description
technical field [0001] The invention belongs to the technical field of material physical property detection, and particularly relates to a method for measuring the Young's modulus of a mosaic thin film. Background technique [0002] The dispersion characteristics of surface waves when propagating on thin films carry a lot of information about the physical properties of thin films and substrates, which can be used to characterize the physical properties of thin films, such as the Young's modulus of thin films. Young's modulus is an important parameter to characterize the physical properties of thin-film materials. With the continuous development of integrated circuits, the feature size of integrated circuits continues to decrease, and the semiconductor industry has entered the deep sub-micron era. The interconnect delay has exceeded the gate delay to improve the working speed. the biggest obstacle, so low dielectric constant (low-k) dielectrics begin to replace previous diele...
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IPC IPC(8): G01N29/07G01N29/12
Inventor 肖夏孙远单兴锰
Owner 太仓佳诚半导体设备有限公司