Electroplating apparatus and process for wafer level packaging
A kind of equipment and plating technology, applied in circuits, electrolytic components, electrolytic processes, etc., can solve the problem of high cost and achieve substantial cost savings
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example 1
[0068] Tin - 160g / l to 240g / l
[0069] silver-none
[0070] Acid - 40g / l to 140g / l acid (based on methanesulfonic acid (MSA))
[0071] Organic Additives - None
example 2
[0073] Tin-230g / L
[0074] silver-none
[0075] Acid - 80g / L, as MSA
[0076] Organic additives:
[0077] Ishihara TS202-AD (grain refining additive) available from Ishihara Chemical Co., Ltd. (Ishihara Chemical Co., LTD.) in Kobe, Japan: 40 g / L
[0078] Can be purchased from Ishihara TS-SLG (silver complexing agent)-200g / L of Ishihara Chemical Co., Ltd. (Ishihara Chemical Co., LTD.) in Kobe, Japan
[0079] In Example 2, the anolyte contained organic additives. In typical operation of the apparatus provided herein, a portion of the anolyte is directed from the anode chamber to the cathode chamber via a fluid conduit other than the separator. This flow of anolyte to catholyte is important in maintaining the balance of the plating bath and is called cascade flow, while the addition of anolyte to catholyte is called cascade flow ( cascading). Thus, the anolyte containing the plating additive flows cascaded to the cathode chamber, where the plating additive improves the elec...
example 3
[0082] Tin: 230g / L (tin methanesulfonate)
[0083] Acid: 50g / L (for methanesulfonic acid)
[0084] Silver: no
[0085] Additives: None
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