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Device and method for preparing casting monocrystalline silicon

A single crystal silicon and seed crystal technology, applied in the field of solar photovoltaics, can solve the problems of increasing the production cost of the casting method, increasing the production cost, etc.

Active Publication Date: 2014-11-26
JIANGSU XIEXIN SILICON MATERIAL TECH DEV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method requires the addition of additional single crystal seeds, which directly increases the production cost of the casting method; at the same time, the melting method of this method also puts forward higher requirements for the coating inside the crucible, which indirectly increases the production cost.

Method used

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  • Device and method for preparing casting monocrystalline silicon
  • Device and method for preparing casting monocrystalline silicon
  • Device and method for preparing casting monocrystalline silicon

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] Install the single crystal seed crystal on the clamping head 86 of the seeding device, and lift it into the gas guide tube 70 . 450 kg of primary polysilicon material was placed in a crucible, and 0.13 kg of dopant boron was added. The target resistivity after doping was 1.70 Ω·cm. The crucible 60 filled with materials is placed in the furnace body 10 to evacuate, and the vacuum state in the furnace alternates with the argon atmosphere during the heating stage, which is beneficial to the removal of impurities. When the silicon material is completely melted. Firstly, the temperature of the heater 95 is quickly lowered to 1420° C., and the seeding device is lowered, so that the seed crystal is contacted and infiltrated with the silicon liquid, and the seed crystal is melted for 2 cm. Enter the necking process. After the necking length reaches 50cm, the state enters the shoulder-releasing process. When the detector detects that the outer edge of the single crystal silic...

Embodiment 2

[0058] Install the single crystal seed crystal on the clamping head 86 of the seeding device, and lift it into the gas guide tube 70 . Place 480 kg of raw polysilicon material in the crucible, and put 0.16 kg of dopant boron (the weight of the dopant is related to the type and weight of the polysilicon material, which is the result of a formula calculation, and there is no strict restriction between the two. ratio). The target resistivity after doping was 1.80 Ω·cm. The crucible 60 filled with materials is placed in the furnace body 10 to evacuate, and the vacuum state in the furnace alternates with the argon atmosphere during the heating stage, which is beneficial to the removal of impurities. When the silicon material is completely melted. First, the temperature of the heater 95 is quickly lowered to 1418° C., and the seeding device is lowered to make the seed crystal contact and infiltrate the silicon liquid, and melt the seed crystal for 2 cm. Enter the necking process....

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Abstract

The invention relates to a device for preparing casting monocrystalline silicon. The device comprises a furnace body, a seeding assembly, a gas flow guide tube, a heat insulation assembly, a crucible and a heater, wherein the heat insulation assembly is arranged in the furnace body, the crucible is placed in the heat insulation assembly, one end of the gas flow guide tube is inserted in the heat insulation assembly in a penetrating way, the other end of the gas flow guide tube extends out of the furnace body, the seeding assembly comprises a clamping head for clamping seed crystals and a driving element for driving the clamping head, and the clamping head is positioned above the crucible. The casting monocrystalline silicon prepared by adopting the device for preparing the casting monocrystalline silicon has lower cost. The invention also provides a method for preparing the casting monocrystalline silicon.

Description

【Technical field】 [0001] The invention belongs to the field of solar photovoltaic technology, and in particular relates to a device and method for preparing cast single crystal silicon. 【Background technique】 [0002] At present, the most widely used solar cell material is crystalline silicon material, including single crystal silicon and polycrystalline silicon material. The most prominent feature of crystalline silicon solar cell is its stability and high efficiency. [0003] At present, monocrystalline silicon for solar energy is mainly produced by the Czochralski method (CZ method), which has the characteristics of low defect and high efficiency, and can form a pyramid-shaped texture by alkali texturing to improve the absorption of light, thereby Improve conversion efficiency. But at the same time, monocrystalline silicon also has the disadvantage of high production cost. Polysilicon is mainly obtained by directional solidification (casting), which occupies more than h...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B11/00C30B29/06
Inventor 武鹏胡亚兰
Owner JIANGSU XIEXIN SILICON MATERIAL TECH DEV