Optical fluid detection device based on inorganic oxide thin film and preparation method thereof
A technology of inorganic oxides and optofluids, which is applied in the measurement of phase influence characteristics, etc., and can solve problems such as unfavorable micro-nano devices and system use
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Embodiment 1
[0031] Example 1 Y 2 o 3 Fabrication of pipeline structures composed of functional thin films.
[0032] Put polymethyl methacrylate (PMMA) pellets in acetone at 60 o C is incubated until PMMA is completely dissolved, and is prepared into an acetone solution of PMMA (concentration: 5%). Use this solution to uniformly coat a layer of PMMA thin film on the glass substrate as an organic sacrificial layer by spin coating method (speed: 3000 rpm). The sacrificial layer was then divided into 1 mm×1 mm squares with a razor blade. Selective Electron Beam Evaporation for Deposition of Inorganic Functional Thin Films, Y 2 o 3 as a source of evaporation. Y 2 o 3 60 to the substrate normal o angular orientation to the sample surface, thus leaving openings in the film (as attached figure 1 shown). In order to form the prestress gradient, Y 2 o 3 The film was deposited in two parts. The first part, with a thickness of 10 nm, was deposited at a rate of 2 ? / s. The second par...
Embodiment 2
[0033] Example 2 Y 2 o 3 / ZrO 2 Fabrication of pipe-structured optical microcavities composed of bilayer functional films.
[0034] A (100) silicon wafer was used as the substrate. The organic sacrificial layer used is ARP3510 photoresist sacrificial layer. The sacrificial layer was prepared by spin coating method (rotating speed: 3500 rpm), and its thickness was about 2 μm. Using photolithography, the photoresist was patterned into a square with a side length of 80 μm. Inorganic functional thin film deposition process chooses Y 2 o 3 with ZrO 2 As an evaporation source, the electron beam evaporation method is used to deposit a thin film on the surface of the sample. The deposition direction is 60° to the substrate normal direction o horn. In order to prevent oxides from being reduced during film deposition, an appropriate amount of oxygen (O 2 ). At the same time, different amounts of oxygen are fed into different films to change the air pressure in the chamber...
Embodiment 3
[0035] Example 3 HfO 2 / SiO / SiO 2 / HfO 2 Fabrication and working methods of optofluidic detectors.
[0036] A (100) silicon wafer was used as the substrate. The organic sacrificial layer used is ARP3510 photoresist sacrificial layer. The sacrificial layer is prepared by spin coating method (rotating speed: 3500 rpm). Using photolithography, the photoresist was patterned into a square with a side length of 50 μm. Deposit SiO / SiO on the surface of the sample by electron beam evaporation 2 Double-layer film, the deposition direction is 60° to the substrate normal direction o horn. In addition, when depositing SiO 2 When layering, an appropriate amount of oxygen (O 2 ). The specific parameters of the deposition process of the double-layer functional thin film are: the SiO layer deposition rate is 5 ? / s, the film thickness is 8 nm, and the air pressure in the control chamber is 8×10 -5 Pa; SiO 2 The layer deposition rate is 0.2 ? / s, the film thickness is 32 nm, and...
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