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Semiconductor structure and manufacturing method thereof

A manufacturing method, semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as easy residual metal particles

Inactive Publication Date: 2012-07-04
ADVANCED SEMICON ENG INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, due to the dielectric structure, the metal particles of the conductive structure are easy to remain

Method used

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  • Semiconductor structure and manufacturing method thereof
  • Semiconductor structure and manufacturing method thereof
  • Semiconductor structure and manufacturing method thereof

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Embodiment Construction

[0044] Please refer to Figure 1A , which shows a cross-sectional view of a semiconductor structure according to an embodiment of the present invention. The semiconductor structure 100 includes a substrate 110 , a passive device layer 120 and a second dielectric layer 150 .

[0045] Such as Figure 1A As shown, the substrate 110 is, for example, a glass substrate or a silicon substrate, which has an upper surface 110u and a lower surface 110b opposite to each other.

[0046] Such as Figure 1A As shown, the passive device layer 120 is formed on the upper surface 110 u of the substrate 110 . In this embodiment, the passive device layer 120 includes at least one capacitive structure C, a first dielectric layer 121 and a patterned circuit layer 122 .

[0047] Such as Figure 1A As shown, the first dielectric layer 121 covers the capacitive structure C. The first dielectric layer 121 has at least one opening 121a, which exposes a part of the capacitor structure C, so that the pa...

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Abstract

Provided are a semiconductor structure and a manufacturing method thereof. The semiconductor structure comprises a substrate and a capacitor structure, wherein the capacitor structure comprises a first conducting layer, a second conducting layer and a dielectric layer. The first conducting layer is formed on the substrate, the second conducting layer is provided with a lateral side, the dielectric layer is formed between the first conducting layer and the second conducting layer and provided with a lateral side, and a distance is formed between the lateral side of the dielectric layer and the lateral side of the second conducting layer.

Description

technical field [0001] The present invention relates to a semiconductor structure and its manufacturing method, and in particular to a semiconductor structure with passive elements and its manufacturing method. Background technique [0002] Conventional semiconductor structures with passive components include capacitive structures, inductive structures, and resistive structures. As far as the capacitor structure is concerned, it is composed of a dielectric layer sandwiched between two metal layers. [0003] However, the metal particles of the conductive structure tend to remain due to the dielectric structure. When a high voltage is applied to the capacitive structure, the dielectric structure is electrically connected to the conductive structure through the residual particles, so that the capacitive structure loses the capacitive function. Generally, the capacitive structure of the semiconductor structure is short-circuited whenever the voltage exceeds 30 to 40 volts (bre...

Claims

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Application Information

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IPC IPC(8): H01L23/522H01L21/768
Inventor 李德章陈纪翰陈建桦周泽川杨秉丰施旭强
Owner ADVANCED SEMICON ENG INC