Near-infrared band full silicon-base nanometer photoelectric detector

Abstract

The invention discloses a near-infrared band full silicon-base nanometer photoelectric detector, which comprises a substrate, a silicon nanowire optical waveguide, a Schottky contact electrode, an ohmic contact electrode and an insulating layer. The silicon nanowire optical waveguide is built on the substrate; the Schottky contact electrode covers the top and the side walls of the substrate; the insulating layer is applied between the silicon nanowire optical waveguide and the Schottky contact electrode; and the ohmic contact electrode is arranged at a place where the panel area of the silicon nanowire optical waveguide is 1-2 microns away from the Schottky contact electrode. Incident light is input from the silicon nanowire optical waveguide and absorbed in the Schottky contact area; the incident light is switched into a photon-generated carrier through the inner light emission effect; and then the incident light is collected by the Schottky contact electrode and the ohmic contact electrode so as to form light current and realize photoelectric conversion. The detector provided by the invention overcomes the physical constraint that the near-infrared light is not absorbed by the wide band gap silicon; and the detector has better characteristics of large bandwidth, insensitive polarization and the like. The absorption rate is high; the detector can be made as small as possible; the process preparation can be compatible with a CMOS (Complementary Metal-Oxide-Semiconductor Transistor); and the detector is simple to prepare and low in cost.

Description

technical field [0001] The invention relates to the technical field of photoelectric detection, in particular to an all-silicon-based nano photodetector in the near-infrared band. Background technique [0002] In the 21st century, electrical interconnection technology has developed to the nanometer scale, and has encountered two physical bottlenecks: high power consumption and signal delay, while optical interconnection technology has been recommended and received widespread attention due to its advantages such as large capacity, large bandwidth, and low power consumption. Optical interconnection technology on silicon substrates is more unanimously optimistic, because silicon has mature micro-nano processing technology, and has good optical and electrical properties. However, the size mismatch of optoelectronic devices and wide bandgap semiconductor silicon materials have no absorption in the optical communication band (wavelength greater than 1.1 μm) lower than its bandgap ...

AI Technical Summary

Problems solved by technology

However, these surface plasmon waveguide structures only support the transverse magnetic (Transverse Magnetic, TM) polarization mode, not the transverse electric (Transverse Electronic, TE) polarization mode. Therefore, the photoelectric response of the detector is Significantly inferior to the case of TM polarized light input

In addition, the active region of the detector must be long enough (tens of microns) to fully absorb the incident light and generate a sufficiently large photocurrent, and the degree of integration needs to be further improved

Images